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<p>Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>), a promising two-dimensional (2D) semiconductor, holds great potential for optoelectronic applications but suffers from poor electron–hole separation and limited carrier diffusion. To overcome these limitations, S-doped g-C<sub>3</sub>N<sub>4</sub> samples with varying sulfur concentrations (2, 4, and 6 wt%) were synthesized to enhance light absorption and charge transport. Structural characterization using XRD, FTIR, and FESEM confirmed the successful incorporation of sulfur and improved material properties. Optical and electrical characterizations—including UV–Vis, photoluminescence, EIS spectroscopy, Mott–Schottky analysis, and photocurrent measurements—revealed that the gCN(4&#xa0;S%) sample exhibited the highest photocurrent, attributed to enhanced light absorption, increased charge carrier density, and reduced trap site. The EIS analysis showed the smallest Nyquist semicircle for gCN(4&#xa0;S%), indicating efficient electron–hole separation and improved conductivity. Furthermore, photodetector performance metrics—including photoresponsivity (206.88&#xa0;mA/W), specific detectivity (6.2161 × 10¹⁰ Jones), photosensitivity (5060), and external quantum efficiency (950%)—were significantly enhanced in gCN(4&#xa0;S%) compared to undoped and other doped samples. These findings suggest that optimal S-doping substantially improves the optoelectronic performance of g-C<sub>3</sub>N<sub>4</sub>, making gCN(4&#xa0;S%) a strong candidate for high-performance photodetector applications.</p>

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Structure–property correlation in sulfur-doped g-C3N4: enhanced charge dynamics and optoelectronic response for photodetection applications

  • 期刊论文

  • 发表日期：

    2026年2月9日

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  • Elham Kharatzadeh,
  • Marzieh Khademalrasool

摘要

Graphitic carbon nitride (g-C3N4), a promising two-dimensional (2D) semiconductor, holds great potential for optoelectronic applications but suffers from poor electron–hole separation and limited carrier diffusion. To overcome these limitations, S-doped g-C3N4 samples with varying sulfur concentrations (2, 4, and 6 wt%) were synthesized to enhance light absorption and charge transport. Structural characterization using XRD, FTIR, and FESEM confirmed the successful incorporation of sulfur and improved material properties. Optical and electrical characterizations—including UV–Vis, photoluminescence, EIS spectroscopy, Mott–Schottky analysis, and photocurrent measurements—revealed that the gCN(4 S%) sample exhibited the highest photocurrent, attributed to enhanced light absorption, increased charge carrier density, and reduced trap site. The EIS analysis showed the smallest Nyquist semicircle for gCN(4 S%), indicating efficient electron–hole separation and improved conductivity. Furthermore, photodetector performance metrics—including photoresponsivity (206.88 mA/W), specific detectivity (6.2161 × 10¹⁰ Jones), photosensitivity (5060), and external quantum efficiency (950%)—were significantly enhanced in gCN(4 S%) compared to undoped and other doped samples. These findings suggest that optimal S-doping substantially improves the optoelectronic performance of g-C3N4, making gCN(4 S%) a strong candidate for high-performance photodetector applications.