<p>CdTe thin film photodetectors and CdTe/Si heterojunction photodetectors were fabricated by using PLD system. CdTe thin films were grown by increasing the amount of applied laser pulses. The surface morphology, crystal structure and optical characterization were investigated. The higher in the laser pulse number or energy cause the particle size to expand and the thin film thickness to increase and the band gap to decrease. In addition, the atomic weight ratio of Cd increased and that of Te decreased with the augment in the laser pulses number. CdTe thin film and CdTe/Si heterojunction materials exhibited photodetector properties under the 1sun of 100 mW/cm². The photosensitivity, responsivity, detectivity and photocurrent gain of the photodetectors were calculated based on the opto-electronical measurements under 100 mW/cm². The photodetector performance of CdTe/Si heterojunctions has been demonstrated to outperform that of CdTe thin films, exhibiting superior characteristics in terms of photosensitivity, responsivity, detectivity and photocurrent gain. In the crystalline characterization, XRD analysis revealed that all CdTe films were polycrystalline with mixed cubic and hexagonal phases, with grain size increasing and dislocation density decreasing as thickness grew. Based on the obtained SEM and AFM images it can be said that there are particle coalescence and island-like surface structures at higher thicknesses, directly proportional with the roughness. These findings demonstrate that CdTe thin films and CdTe/Si heterojunctions produced by employing PLD technique offer a simple pathway to tune optoelectronic properties, with heterojunction devices showing particular promise for future high-performance photodetectors.</p>