<p>This paper explores the sensing capabilities of one-dimensional (1-D) photonic crystals (PC) based on the thermo-optic effect in alternating layers of Gallium Nitride (GaN) and Silicon Nitride (Si<sub>3</sub>N<sub>4</sub>) with double defect layers of air under the application of very high temperatures, ranging from 1000℃ to 1700℃ in 50℃ temperature increments. The proposed new structure of double defect layers enhances sensing efficiency by generating two distinct resonance modes. The principle of the 1-D PC is explained by its optical behaviour, specifically photonic band gap (PBG) without and with defect layers. The temperature sensing efficiency is developed by adding defect layers in the PC, which enables it to transmit two resonance peaks due to double defect layers. The transmission and reflection behaviour of PC is plotted using the computational method, and the numerical values of the proposed sensor are calculated by the well-known transfer matrix method (TMM), resulting in the effective parameters like sensitivity, quality factor (Q-factor), full width at half maxima (FWHM) of the PC. The sensitivity of the sensor for mode − 1 is approximately 0.008&#xa0;nm/℃, while the sensitivity for mode − 2 is about 0.014&#xa0;nm/℃. The FWHM of the resonance peaks for mode − 1 and mode-2 are 6.3&#xa0;nm and 10.832&#xa0;nm, respectively, at a temperature of 1000℃. The Q-factors for mode − 1 and mode − 2 are 158.512 and 125.802, respectively, at 1000℃.</p>

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Tunable 1-D photonic crystal sensor for high temperature measurement by introducing double defect mode within successive layers of gallium nitride and silicon nitride

  • Barnali Pal,
  • Bibhatsu Kuiri,
  • Saikat Santra,
  • Dipankar Biswas,
  • Probodh Kumar Kuiri,
  • Ardhendu Sekhar Patra

摘要

This paper explores the sensing capabilities of one-dimensional (1-D) photonic crystals (PC) based on the thermo-optic effect in alternating layers of Gallium Nitride (GaN) and Silicon Nitride (Si3N4) with double defect layers of air under the application of very high temperatures, ranging from 1000℃ to 1700℃ in 50℃ temperature increments. The proposed new structure of double defect layers enhances sensing efficiency by generating two distinct resonance modes. The principle of the 1-D PC is explained by its optical behaviour, specifically photonic band gap (PBG) without and with defect layers. The temperature sensing efficiency is developed by adding defect layers in the PC, which enables it to transmit two resonance peaks due to double defect layers. The transmission and reflection behaviour of PC is plotted using the computational method, and the numerical values of the proposed sensor are calculated by the well-known transfer matrix method (TMM), resulting in the effective parameters like sensitivity, quality factor (Q-factor), full width at half maxima (FWHM) of the PC. The sensitivity of the sensor for mode − 1 is approximately 0.008 nm/℃, while the sensitivity for mode − 2 is about 0.014 nm/℃. The FWHM of the resonance peaks for mode − 1 and mode-2 are 6.3 nm and 10.832 nm, respectively, at a temperature of 1000℃. The Q-factors for mode − 1 and mode − 2 are 158.512 and 125.802, respectively, at 1000℃.