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<p>Although natural extracts have recently been explored as low-cost active layers for photodetectors, most reported devices still suffer from low photocurrent generation and inefficient charge separation at the organic/inorganic interface. A key research gap is the lack of high-performance <i>Hesperis matronalis</i> subsp. <i>matronalis</i> L. extract (HSPR)/silicon heterojunctions that can overcome these limitations and demonstrate competitive responsivity and detectivity. HSPR was obtained by aqueous extraction method. The prepared extract was coated on Si wafers by spin coating method. The dark I–V curves of the HSPR@p-Si heterostructure displayed a significant rectification characteristics. I–V measurements of the HSPR@p-Si heterostructure were carried out under white light, 365 (UV), 590 (yellow) and 850&#xa0;nm (IR) lights, and in all cases the device showed typical photodetector behavior. The maximum R of &gt; 4.54&#xa0;A/W and D* of ~ 1 × 10<sup>12</sup> Jones are determined at a wavelength of 590&#xa0;nm. Furthermore, the highest value of NPDR, NEP and EQE, were ~ 2.1 × 10<sup>7</sup> W<sup>−1</sup>, ~&#xa0;2 × 10<sup>−12</sup> WH<sup>−0.5</sup> and ~ 932(%), at 590&#xa0;nm under the power intensity of 8 mW/cm<sup>2</sup>. Additionally, the device maintained its stability after 30 days in room environment without any encapsulation. HSPR’s strong interaction with light has led to the conclusion that it could open new doors for optoelectronic applications in the future.</p>

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Development of highly sensitive UV–Vis–NIR heterostructure photodetector using Hesperis matronalis subsp. matronalis (HSPR) extract on p-Si

  • 期刊论文

  • 发表日期：

    2026年1月13日

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  • Songül Karakaya,
  • Fatma Yıldırım,
  • Hafize Yuca,
  • Ümit İncekara,
  • Ali Ben Ahmed,
  • Mostefa Benhaliliba,
  • Şakir Aydoğan

摘要

Although natural extracts have recently been explored as low-cost active layers for photodetectors, most reported devices still suffer from low photocurrent generation and inefficient charge separation at the organic/inorganic interface. A key research gap is the lack of high-performance Hesperis matronalis subsp. matronalis L. extract (HSPR)/silicon heterojunctions that can overcome these limitations and demonstrate competitive responsivity and detectivity. HSPR was obtained by aqueous extraction method. The prepared extract was coated on Si wafers by spin coating method. The dark I–V curves of the HSPR@p-Si heterostructure displayed a significant rectification characteristics. I–V measurements of the HSPR@p-Si heterostructure were carried out under white light, 365 (UV), 590 (yellow) and 850 nm (IR) lights, and in all cases the device showed typical photodetector behavior. The maximum R of > 4.54 A/W and D* of ~ 1 × 1012 Jones are determined at a wavelength of 590 nm. Furthermore, the highest value of NPDR, NEP and EQE, were ~ 2.1 × 107 W−1, ~ 2 × 10−12 WH−0.5 and ~ 932(%), at 590 nm under the power intensity of 8 mW/cm2. Additionally, the device maintained its stability after 30 days in room environment without any encapsulation. HSPR’s strong interaction with light has led to the conclusion that it could open new doors for optoelectronic applications in the future.