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<p>The source of terahertz (THz) radiation upon exposure of wide-bandgap semiconductors to femtosecond laser pulses in a magnetic field is photoexcited electrons. It is shown that a quantitative description of THz pulses generation can be achieved using confluent Heun functions. The electric field strength and total energy of THz pulse have been found for an arbitrary ratio of the size of photoexcited electron localization region to the characteristic wavelength of generated radiation. Numerical calculations of the field strength at the sample surface and the total energy have been performed for GaAs.</p>

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Influence of the laser radiation absorption coefficient value on the generation of THz pulses in wide-bandgap semiconductors in a magnetic field

  • 期刊论文

  • 发表日期：

    2025年12月8日

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  • Vyacheslav E. Grishkov,
  • Sergey A. Uryupin

摘要

The source of terahertz (THz) radiation upon exposure of wide-bandgap semiconductors to femtosecond laser pulses in a magnetic field is photoexcited electrons. It is shown that a quantitative description of THz pulses generation can be achieved using confluent Heun functions. The electric field strength and total energy of THz pulse have been found for an arbitrary ratio of the size of photoexcited electron localization region to the characteristic wavelength of generated radiation. Numerical calculations of the field strength at the sample surface and the total energy have been performed for GaAs.