Highly efficient 1.76 μm on-chip amplification in in-band pumped Tm3+-doped LNOI photonic wire
摘要
1.76 μm on-chip gain features of Tm3+-doped LNOI(LiNbO3-on-insulator) photonic wire are studied in case of in-band pumping at 1.66 μm wavelength. A quasi-two-level model of Tm3+ is proposed and validated by simulating a conventional Ti-diffused Tm:LiNbO3(Ti:Tm:LN) waveguide amplifier and comparing with previously reported experimental result. Based on steady rate equations, analytical expressions were derived for population densities of two states involved. Important performance specifications, including population inversion, signal gain and threshold pump power, are quantified against propagation length, pump level, input signal power and Tm3+ concentration. Owing to ultra-compact mode field, the Tm3+-doped LNOI photonic wire shows much superior gain features than the conventional Ti:Tm:LN waveguide. These include much stronger pump power and propagation distance dependences of signal gain, one more orders of magnitude lower threshold pump power, and two orders of magnitude higher saturation gain. Moreover, due to absence of upconversion emissions and simultaneous single-mode operation of both pump and signal waves, the change of pumping wavelength from 795 nm to 1.66 μm results in an increase of maximal gain by nearly one order of magnitude, a decrease of optimal photonic wire length by > 35% and a decrease of threshold pump power by at least two times. Important issues related to device’s fabrication, performance and application have been clarified.