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<p>We perform a computational investigation of an optimized InGaN solar cell structure featuring a p-In₀.₅₃Ga₀.₄₇N / p-In₀.₇₀Ga₀.₃₀N / n-In₀.₇₀Ga₀.₃₀N (p-p-n) configuration using SCAPS-1D simulation software. This design integrates a dual-bandgap grading approach to simultaneously enhance carrier collection and suppress recombination. Compared to the conventional p-n structure, the p-p-n architecture achieves a power conversion efficiency (PCE) of 31.05%, with <i>J</i><sub><i>sc</i></sub> = 38.58 mA/cm<sup>2</sup>, <i>V</i><sub><i>oc</i></sub> = 0.9207 V, and a fill factor of 87.41%. External quantum efficiency (EQE) reaches nearly 100% in the 300–820 nm range and maintains 91.4% at 1000 nm due to reduced infrared absorption. These results, obtained under ideal assumptions (defect-free layers, perfect interfaces, and no polarization fields), represent an upper-bound of achievable performance. This study proposes an optimized p-p-n InGaN design with dual bandgap grading, demonstrating improved efficiency compared to conventional p-n structures, achieving an 18.7% relative efficiency improvement.</p>

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Computational optimization of InGaN solar cells: achieving 31.05% efficiency with p-p-n structure design

  • 期刊论文

  • 发表日期：

    2025年11月19日

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  • Aissa Bellakhdar,
  • Fathi Bendelala,
  • Ali Soltani,
  • Ali Cheknane

摘要

We perform a computational investigation of an optimized InGaN solar cell structure featuring a p-In₀.₅₃Ga₀.₄₇N / p-In₀.₇₀Ga₀.₃₀N / n-In₀.₇₀Ga₀.₃₀N (p-p-n) configuration using SCAPS-1D simulation software. This design integrates a dual-bandgap grading approach to simultaneously enhance carrier collection and suppress recombination. Compared to the conventional p-n structure, the p-p-n architecture achieves a power conversion efficiency (PCE) of 31.05%, with Jsc = 38.58 mA/cm2, Voc = 0.9207 V, and a fill factor of 87.41%. External quantum efficiency (EQE) reaches nearly 100% in the 300–820 nm range and maintains 91.4% at 1000 nm due to reduced infrared absorption. These results, obtained under ideal assumptions (defect-free layers, perfect interfaces, and no polarization fields), represent an upper-bound of achievable performance. This study proposes an optimized p-p-n InGaN design with dual bandgap grading, demonstrating improved efficiency compared to conventional p-n structures, achieving an 18.7% relative efficiency improvement.