<p>Silver-doped cadmium sulfide (CdS) thin films were synthesized using the laser-assisted chemical bath deposition (LACBD) technique with Ag concentrations ranging from 1 to 5%. The main goal was to investigate the impact of carefully controlled silver (Ag) insertion on the structural, optical, and electrical properties of cadmium sulfide (CdS) films for optoelectronic applications, especially UV–visible photodetection. These changes were confirmed by material characterization through several techniques, which revealed substantial variations in the morphology, composition, and electronic properties of the materials with increasing silver content. The optical band gap was adjusted from 2.87 to 2.34 eV, and electrical tests indicated improved photodetection performance. At a doping level of 3% Ag, the performance of the films was exceptional. Several excellent parameters were measured at this concentration, such as responsivity of 1085.3 A/W, sensitivity of 5363.4%, gain of 54.63, and detectivity of 1.18 × 10<sup>12</sup> Jones. However, higher doping levels caused the creation of defects, which led to the reduction of device efficiency. These results point to 3% Ag-doped CdS thin films as new materials for UV–visible Photodetector with high sensitivity, and they also indicate the success of LACBD in modulating the optoelectronic properties of the thin film.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Enhanced UV–visible photodetection using silver-doped CdS thin films created via laser-assisted chemical bath deposition

  • Khawla Ahmad Aloueedat,
  • Iskandar Shahrim Mustafa,
  • Naser M. Ahmed,
  • Muhammad Rabie Omar

摘要

Silver-doped cadmium sulfide (CdS) thin films were synthesized using the laser-assisted chemical bath deposition (LACBD) technique with Ag concentrations ranging from 1 to 5%. The main goal was to investigate the impact of carefully controlled silver (Ag) insertion on the structural, optical, and electrical properties of cadmium sulfide (CdS) films for optoelectronic applications, especially UV–visible photodetection. These changes were confirmed by material characterization through several techniques, which revealed substantial variations in the morphology, composition, and electronic properties of the materials with increasing silver content. The optical band gap was adjusted from 2.87 to 2.34 eV, and electrical tests indicated improved photodetection performance. At a doping level of 3% Ag, the performance of the films was exceptional. Several excellent parameters were measured at this concentration, such as responsivity of 1085.3 A/W, sensitivity of 5363.4%, gain of 54.63, and detectivity of 1.18 × 1012 Jones. However, higher doping levels caused the creation of defects, which led to the reduction of device efficiency. These results point to 3% Ag-doped CdS thin films as new materials for UV–visible Photodetector with high sensitivity, and they also indicate the success of LACBD in modulating the optoelectronic properties of the thin film.