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<p>p-Si/n-ZnO heterojunction diodes have garnered significant attention for energy conversion applications due to their superior optoelectronic properties. In this study, we synthesized n-Zn(1-<sub>x</sub>)In<sub>x</sub>O two-dimensional (2D) nanoflakes using a phytochemical-assisted synthesis technique, enabling precise control over nanoflake size via In<sup>3+</sup> dopant concentration. This eco-friendly approach offers a sustainable and scalable method for fabricating high-performance nanostructures. Structural analysis confirmed the hexagonal wurtzite crystal structure of Zn<sub>(1−x)</sub>In<sub>x</sub>O, while transmission electron microscopy revealed 2D flake-like morphologies ranging from 100&#xa0;nm to 250&#xa0;nm. Optical characterization demonstrated bandgap tunability, with pristine ZnO exhibiting a bandgap of 3.38&#xa0;eV and In<sup>3+</sup>-doped ZnO (1%, 3%, and 5%) showing bandgaps of 3.42&#xa0;eV, 3.46&#xa0;eV, and 3.48&#xa0;eV, respectively, due to the Burstein-Moss effect. The p-Si/n-Zn<sub>(1−x)</sub>In<sub>x</sub>O heterojunction diodes exhibited enhanced rectification, electrical conductivity, and optoelectronic performance. Under forward bias, the dark current and photocurrent values of the p-Si/ZnO and p-Si/Zn<sub>0.95</sub>In<sub>0.05</sub>O diodes were 6.4 × 10⁻⁴ A &amp; 8.8 × 10⁻⁴ A and 4.3 × 10⁻³ A &amp; 6.3 × 10⁻³ A, respectively, indicating a significant enhancement due to In<sup>3+</sup> doping. These findings demonstrate a novel pathway for engineering high-performance heterojunction diodes through sustainable synthesis and precise dopant engineering, paving the way for next-generation optoelectronic and energy conversion devices.</p>

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Green production of n-type Zn1−xInxO 2D nanoflakes and the photo-electrical characteristics of p-Si/n-Zn1−xInxO heterojunction diodes

  • 期刊论文

  • 发表日期：

    2025年11月10日

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  • P. Arul,
  • K. Arulvendhan,
  • R. Satheesh,
  • S. Banumathi

摘要

p-Si/n-ZnO heterojunction diodes have garnered significant attention for energy conversion applications due to their superior optoelectronic properties. In this study, we synthesized n-Zn(1-x)InxO two-dimensional (2D) nanoflakes using a phytochemical-assisted synthesis technique, enabling precise control over nanoflake size via In3+ dopant concentration. This eco-friendly approach offers a sustainable and scalable method for fabricating high-performance nanostructures. Structural analysis confirmed the hexagonal wurtzite crystal structure of Zn(1−x)InxO, while transmission electron microscopy revealed 2D flake-like morphologies ranging from 100 nm to 250 nm. Optical characterization demonstrated bandgap tunability, with pristine ZnO exhibiting a bandgap of 3.38 eV and In3+-doped ZnO (1%, 3%, and 5%) showing bandgaps of 3.42 eV, 3.46 eV, and 3.48 eV, respectively, due to the Burstein-Moss effect. The p-Si/n-Zn(1−x)InxO heterojunction diodes exhibited enhanced rectification, electrical conductivity, and optoelectronic performance. Under forward bias, the dark current and photocurrent values of the p-Si/ZnO and p-Si/Zn0.95In0.05O diodes were 6.4 × 10⁻⁴ A & 8.8 × 10⁻⁴ A and 4.3 × 10⁻³ A & 6.3 × 10⁻³ A, respectively, indicating a significant enhancement due to In3+ doping. These findings demonstrate a novel pathway for engineering high-performance heterojunction diodes through sustainable synthesis and precise dopant engineering, paving the way for next-generation optoelectronic and energy conversion devices.