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<p>High-efficiency hole-selective passivating contacts are crucial for achieving high performance in solar cells via full-area charge extraction. In this study, we numerically simulated the hole-selective passivating contact using Al<sub>2</sub>O<sub>3</sub> with MoO<sub>x</sub>, NiO<sub>x</sub>, WO<sub>x</sub>, or CuO<sub>x</sub> and applied it to the rear of a p-type tunnel oxide passivated contact (TOPCon) solar cell. Our investigation revealed that the ultrathin layer of Al<sub>2</sub>O<sub>3</sub> with a 10<sup>−7</sup> cm<sup>−2</sup> pinhole density serving as a tunneling layer, played a vital role in enhancing the hole selectivity of the simulated structures. We have optimized the best device structure with NiO<sub>x</sub> as the back surface layer in the TOPCon solar cell. We have identified a thickness for the of 4&#xa0;nm NiO<sub>x</sub> layer, with a trap density to 10<sup>14</sup> cm<sup>−3</sup>. The optimal thickness for the tunneling layer Al<sub>2</sub>O<sub>3</sub> was found to be approximately 0.3&#xa0;nm. We have obtained the highest efficiency of 25.89% in the p-type TOPCon device with NiO<sub>x</sub> as the high efficiency hole selectivity, marking the highest performance among all oxide-based p-type TOPCon solar cells in our analysis. This study underscores the significant potential of the hole-selective passivating material Al<sub>2</sub>O<sub>3</sub>/NiO<sub>x</sub>/Ag in full-area charge carriers selective layer for solar cells.</p>

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Optimization of high-efficiency hole-selective passivating contacts in p-type TOPCon solar cells approaching 26%: a comparative performance study

  • 期刊论文

  • 发表日期：

    2025年10月11日

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  • Rabia Saeed,
  • Sofia Tahir,
  • Shammas Mushtaq,
  • M. Haneef,
  • Rasmiah S. Almufarij,
  • Javed Iqbal,
  • Khushi Muhammad Khan,
  • Noman Ashraf,
  • Lamiaa G. Alharbe,
  • Arslan Ashfaq

摘要

High-efficiency hole-selective passivating contacts are crucial for achieving high performance in solar cells via full-area charge extraction. In this study, we numerically simulated the hole-selective passivating contact using Al2O3 with MoOx, NiOx, WOx, or CuOx and applied it to the rear of a p-type tunnel oxide passivated contact (TOPCon) solar cell. Our investigation revealed that the ultrathin layer of Al2O3 with a 10−7 cm−2 pinhole density serving as a tunneling layer, played a vital role in enhancing the hole selectivity of the simulated structures. We have optimized the best device structure with NiOx as the back surface layer in the TOPCon solar cell. We have identified a thickness for the of 4 nm NiOx layer, with a trap density to 1014 cm−3. The optimal thickness for the tunneling layer Al2O3 was found to be approximately 0.3 nm. We have obtained the highest efficiency of 25.89% in the p-type TOPCon device with NiOx as the high efficiency hole selectivity, marking the highest performance among all oxide-based p-type TOPCon solar cells in our analysis. This study underscores the significant potential of the hole-selective passivating material Al2O3/NiOx/Ag in full-area charge carriers selective layer for solar cells.