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<p>In this study, a photodiode with an Al/p-Si/CuFe₂O₄/Al structure was fabricated using synthesized CuFe₂O₄ nanoparticles, and its electrical properties were systematically investigated. The current-voltage (I-V) characteristics were measured in the voltage range from − 7&#xa0;V to + 7&#xa0;V at different light intensities and showed a significant increase in current upon illumination. The ideality factor (n) and barrier height (Φ<sub>b</sub>) were calculated under both dark and illuminated conditions. The n value was 2.193 in the dark and ranged from 2.192 to 2.343 under illumination. The Φ<sub>b</sub> values varied slightly with light intensity, reaching a maximum of 1.90&#xa0;eV. In addition, the responsivity (R) and detectivity (D<sup>*</sup>) of the device at a light intensity of 10 mW/cm² were calculated to be 61,664&#xa0;mA/W and 3.89 × 10¹² Jones, respectively. These results show the high potential of the Al/p-Si/CuFe₂O₄/Al photodiode for use in photovoltaic and photodetector applications.</p>

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Photonic and optoelectronic properties of spinel CuFe₂O₄ nanostructures for device applications

  • 期刊论文

  • 发表日期：

    2025年8月11日

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  • Aysegul Dere,
  • Mesut Yalcin,
  • Shehab Mansour,
  • Fahrettin Yakuphanoglu

摘要

In this study, a photodiode with an Al/p-Si/CuFe₂O₄/Al structure was fabricated using synthesized CuFe₂O₄ nanoparticles, and its electrical properties were systematically investigated. The current-voltage (I-V) characteristics were measured in the voltage range from − 7 V to + 7 V at different light intensities and showed a significant increase in current upon illumination. The ideality factor (n) and barrier height (Φb) were calculated under both dark and illuminated conditions. The n value was 2.193 in the dark and ranged from 2.192 to 2.343 under illumination. The Φb values varied slightly with light intensity, reaching a maximum of 1.90 eV. In addition, the responsivity (R) and detectivity (D*) of the device at a light intensity of 10 mW/cm² were calculated to be 61,664 mA/W and 3.89 × 10¹² Jones, respectively. These results show the high potential of the Al/p-Si/CuFe₂O₄/Al photodiode for use in photovoltaic and photodetector applications.