Improved optoelectronic efficiency of CsPbBr3 perovskite thin films decorated by ZnO nanoparticles
摘要
Inorganic cesium lead halide perovskites (CsPbBr3) have garnered significant interest as novel optoelectronic materials due to their improved stability. However, CsPbBr3 thin films produced via the spin-coating method often contain defects that significantly impact their amplified spontaneous emission (ASE) and lasing performance. To address this limitation, we present a straightforward approach: incorporating ZnO nanoparticles (NPs) into the CsPbBr3 precursor solution. The resulting CsPbBr3 films, synthesized through spin-coating, show enhanced crystallization, improved photoluminescence (PL) intensity, and increased photocurrent. Incorporating ZnO nanoparticles (NPs) offers an effective pathway for CsPbBr₃ nucleation during the spin-coating and annealing processes, leading to smaller nanoparticle sizes with enhanced crystallinity. The photoluminescence intensity of both CsPbBr3 and CsPbBr3 films under laser excitation were examined at room temperature. With the crystal size modified by the ZnO additive, the photocurrent density shows a significant improvement compared to that of pure CsPbBr3 films.