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<p>This study investigates the effects of aluminum nanoparticles (Al-NPS) and silicon nitride/porous silicon (SiNx-covered PS) surface treatments on the structural, optical, and optoelectronic properties of multicrystalline silicon (mc-Silicon). Al-NPS were synthesized by depositing a 70&#xa0;nm-thick Al layer onto mc-Silicon substrates, followed by treatment with a stain etching solution. In the second approach, a PS layer was first formed on mc-Silicon and then covered with a 300&#xa0;nm-thick SiNx layer deposited via plasma-enhanced chemical vapor deposition (PECVD). Both surface treatments, PS-treated Al-NPS and the SiNx-covered PS, are scalable, cost-effective, and significantly enhance the electronic quality of mc-Silicon. Key photovoltaic parameters, including reflectivity, effective minority carrier lifetime (τ<sub>eff</sub>), and diffusion length (L<sub>diff</sub>), were measured before and after treatment. As a result, at 600&#xa0;nm wavelength, the reflectivity decreased from 24.5% for the untreated sample to 4.5% for PS-treated Al-NPS and 7% for SiNx-covered PS. Additionally, τ<sub>eff</sub> and L<sub>diff</sub> increased from 3 µs and 105&#xa0;μm for the untreated sample to 5 µs and 131&#xa0;μm for PS-treated Al-NPS, and 7 µs and 210&#xa0;μm for SiNx-covered PS, respectively. These results demonstrate that surface passivation using either PS-treated Al-NPS or a SiNx-covered PS structure effectively improves the mc-Silicon electronic quality, leading to enhanced performance in mc-Silicon-based solar cells.</p>

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Improving optoelectronic properties of multicrystalline silicon via aluminum and sinₓ/porous silicon surface treatments for solar cell applications

  • 期刊论文

  • 发表日期：

    2025年8月8日

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  • Karim Choubani,
  • Mohamed Ben Rabha

摘要

This study investigates the effects of aluminum nanoparticles (Al-NPS) and silicon nitride/porous silicon (SiNx-covered PS) surface treatments on the structural, optical, and optoelectronic properties of multicrystalline silicon (mc-Silicon). Al-NPS were synthesized by depositing a 70 nm-thick Al layer onto mc-Silicon substrates, followed by treatment with a stain etching solution. In the second approach, a PS layer was first formed on mc-Silicon and then covered with a 300 nm-thick SiNx layer deposited via plasma-enhanced chemical vapor deposition (PECVD). Both surface treatments, PS-treated Al-NPS and the SiNx-covered PS, are scalable, cost-effective, and significantly enhance the electronic quality of mc-Silicon. Key photovoltaic parameters, including reflectivity, effective minority carrier lifetime (τeff), and diffusion length (Ldiff), were measured before and after treatment. As a result, at 600 nm wavelength, the reflectivity decreased from 24.5% for the untreated sample to 4.5% for PS-treated Al-NPS and 7% for SiNx-covered PS. Additionally, τeff and Ldiff increased from 3 µs and 105 μm for the untreated sample to 5 µs and 131 μm for PS-treated Al-NPS, and 7 µs and 210 μm for SiNx-covered PS, respectively. These results demonstrate that surface passivation using either PS-treated Al-NPS or a SiNx-covered PS structure effectively improves the mc-Silicon electronic quality, leading to enhanced performance in mc-Silicon-based solar cells.