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<p>The photoluminescence properties of doped zinc oxide (ZnO) nanoparticles have attracted significant attention due to their potential for various optoelectronic applications. Doping ZnO with specific impurities offers a powerful approach to improve its luminescent behavior. In this study, we present a comprehensive investigation of the photoluminescence characteristics of doped ZnO nanoparticles under varying power levels. Our experimental results reveal a remarkable enhancement in the photoluminescence emission intensity with increasing power levels, so the intensity of the PL peak at 400&#xa0;nm increased by 45% with Ni doping compared to undoped ZnO demonstrating the potential of doped ZnO nanoparticles for high-power optoelectronic devices. The enhancement was found to be power-dependent, with the highest intensity observed at 60&#xa0;mW excitation power. Moreover, we identify the key factors responsible for this enhancement and propose a novel approach to further optimize the photoluminescence performance.</p>

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Power-dependent photoluminescence enhancement in Ni, Cu, and Co-doped ZnO nanoparticles for optoelectronic device applications

  • 期刊论文

  • 发表日期：

    2025年9月16日

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  • Imen Ben Elkamel,
  • Nejeh Hamdaoui,
  • Amine Mezni,
  • Ridha Ajjel,
  • Lotfi Beji

摘要

The photoluminescence properties of doped zinc oxide (ZnO) nanoparticles have attracted significant attention due to their potential for various optoelectronic applications. Doping ZnO with specific impurities offers a powerful approach to improve its luminescent behavior. In this study, we present a comprehensive investigation of the photoluminescence characteristics of doped ZnO nanoparticles under varying power levels. Our experimental results reveal a remarkable enhancement in the photoluminescence emission intensity with increasing power levels, so the intensity of the PL peak at 400 nm increased by 45% with Ni doping compared to undoped ZnO demonstrating the potential of doped ZnO nanoparticles for high-power optoelectronic devices. The enhancement was found to be power-dependent, with the highest intensity observed at 60 mW excitation power. Moreover, we identify the key factors responsible for this enhancement and propose a novel approach to further optimize the photoluminescence performance.