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<p>Thin films of (CdS)<sub>x</sub>(TiO<sub>2</sub>)<sub>1-x</sub> were synthesized and deposited on glass substrates using electron-beam evaporation with varying concentrations of CdS in 0, 2, 4, 8, and 10 concentrations. X-ray diffraction (XRD) techniques confirmed that the matrix is polycrystalline with a single monoclinic phase of TiO<sub>2</sub>. From scanning electron microscope studies, <i>Williamson-Hall</i> and <i>Scherrer</i> methods uncovered an interesting principle, stating that with an increase in the concentration of CdS, there is a systematic decrease in crystallite sizes and an increase in microstrain, with the corresponding refinement of the structural characteristics of the films. An optical study showed interesting changes in the electronic structures of the films, which saw a progressive closing down in the energy band gap from 4.18&#xa0;eV to 4.13&#xa0;eV with correlated substantial increases in refractive index (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11082_2025_8325_Article_IEq1.gif" Format="GIF" Height="10" Rendition="HTML" Resolution="72" Type="Linedraw" Width="14" /> </InlineMediaObject> <EquationSource Format="TEX">\(n\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>n</mi> </math></EquationSource> </InlineEquation>) and extinction coefficient (<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11082_2025_8325_Article_IEq2.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="13" /> </InlineMediaObject> <EquationSource Format="TEX">\(k\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>k</mi> </math></EquationSource> </InlineEquation>). All those changes were incorporated to establish band-gap modification directing mechanisms of enhanced visible light absorption. Direct optical transitions were confirmed for the films, with CdS doping consistently leading to decreased energy band gap. Electrical characterization results provided further insight into the potential of the nanocomposite thin film systems. Resistivity significantly reduced from 3371 Ω cm to 1927 Ωcm as CdS incorporation increased. On the other hand, carrier mobility was shown to increase from 4.35 × 10<sup>–5</sup> m<sup>2</sup>/Vs to 6.1 × 10<sup>–5</sup> m<sup>2</sup>/Vs. The enhancement in the optical and electrical properties of the thin films demonstrates their potential application area in modern optoelectronic devices, particularly in next-generation photodetectors and solar cell technologies.</p>

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Fabrication and characterization of CdS-TiO2 nanocomposite thin films for photocatalysis applications

  • 期刊论文

  • 发表日期：

    2025年7月7日

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  • N. M. A. Hadia,
  • Meshal Alzaid,
  • Mohammed Ezzeldien,
  • M. F. Hasaneen

摘要

Thin films of (CdS)x(TiO2)1-x were synthesized and deposited on glass substrates using electron-beam evaporation with varying concentrations of CdS in 0, 2, 4, 8, and 10 concentrations. X-ray diffraction (XRD) techniques confirmed that the matrix is polycrystalline with a single monoclinic phase of TiO2. From scanning electron microscope studies, Williamson-Hall and Scherrer methods uncovered an interesting principle, stating that with an increase in the concentration of CdS, there is a systematic decrease in crystallite sizes and an increase in microstrain, with the corresponding refinement of the structural characteristics of the films. An optical study showed interesting changes in the electronic structures of the films, which saw a progressive closing down in the energy band gap from 4.18 eV to 4.13 eV with correlated substantial increases in refractive index ( \(n\) n ) and extinction coefficient ( \(k\) k ). All those changes were incorporated to establish band-gap modification directing mechanisms of enhanced visible light absorption. Direct optical transitions were confirmed for the films, with CdS doping consistently leading to decreased energy band gap. Electrical characterization results provided further insight into the potential of the nanocomposite thin film systems. Resistivity significantly reduced from 3371 Ω cm to 1927 Ωcm as CdS incorporation increased. On the other hand, carrier mobility was shown to increase from 4.35 × 10–5 m2/Vs to 6.1 × 10–5 m2/Vs. The enhancement in the optical and electrical properties of the thin films demonstrates their potential application area in modern optoelectronic devices, particularly in next-generation photodetectors and solar cell technologies.