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<p>We propose a compact two-color HgCdTe laser capable of operating under optical pumping with a near-infrared semiconductor diode. The gain, distribution of electromagnetic fields, losses, and generation thresholds are calculated for the laser design containing two arrays of quantum wells (QWs). The design originality is to use the intracavity laser radiation at an intermediate wavelength in the mid-infrared so that carrier heating is avoided in the QW array that provides long-wavelength emission. The possibility of lasing at wavelengths of 10.3 and 28.2&#xa0;μm under pump intensity slightly above 1 W/cm<sup>2</sup> at a wavelength of 1&#xa0;μm is shown. Low generation threshold suggests the proposed laser should be able to operate in a continuous wave mode at cryogenic temperature.</p>

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Possibility of continuous wave mode dual frequency mid-infrared HgCdTe-based laser

  • 期刊论文

  • 发表日期：

    2025年6月12日

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  • A. A. Dubinov,
  • V. Ya. Aleshkin,
  • V. V. Rumyantsev,
  • S. V. Morozov

摘要

We propose a compact two-color HgCdTe laser capable of operating under optical pumping with a near-infrared semiconductor diode. The gain, distribution of electromagnetic fields, losses, and generation thresholds are calculated for the laser design containing two arrays of quantum wells (QWs). The design originality is to use the intracavity laser radiation at an intermediate wavelength in the mid-infrared so that carrier heating is avoided in the QW array that provides long-wavelength emission. The possibility of lasing at wavelengths of 10.3 and 28.2 μm under pump intensity slightly above 1 W/cm2 at a wavelength of 1 μm is shown. Low generation threshold suggests the proposed laser should be able to operate in a continuous wave mode at cryogenic temperature.