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<p>The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11082_2025_8104_Article_IEq1.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="29" /> </InlineMediaObject> <EquationSource Format="TEX">\({(I}_{d})\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <msub> <mrow> <mo stretchy="false">(</mo> <mi>I</mi> </mrow> <mi>d</mi> </msub> <mrow> <mo stretchy="false">)</mo> </mrow> </mrow> </math></EquationSource> </InlineEquation>, electric field <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11082_2025_8104_Article_IEq2.gif" Format="GIF" Height="22" Rendition="HTML" Resolution="72" Type="Linedraw" Width="29" /> </InlineMediaObject> <EquationSource Format="TEX">\({(E}_{f}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mrow> <mo stretchy="false">(</mo> <mi>E</mi> </mrow> <mi>f</mi> </msub> </math></EquationSource> </InlineEquation>), and threshold voltage <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11082_2025_8104_Article_IEq3.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="34" /> </InlineMediaObject> <EquationSource Format="TEX">\({(V}_{th}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mrow> <mo stretchy="false">(</mo> <mi>V</mi> </mrow> <mrow> <mi mathvariant="italic">th</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.</p>

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Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach

  • 期刊论文

  • 发表日期：

    2025年3月10日

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  • K. Vinothkumar,
  • A. Kaleel Rahuman

摘要

The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current \({(I}_{d})\) ( I d ) , electric field \({(E}_{f}\) ( E f ), and threshold voltage \({(V}_{th}\) ( V th ) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.