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<p>Silver nanoparticles (Ag NPs) were deposited onto a 2 at.% Tungsten (W)-doped ZnO (WZO)/p-Silicon (p-Si) UV photodetector using a cost-effective sol–gel method. Top-view scanning electron microscopy (SEM) images confirmed the uniform coating of Ag NPs. Cross-sectional SEM analysis revealed a WZO film thickness of 167&#xa0;nm, including the Ag NP layer. UV–Vis spectroscopy demonstrated high transparency with an average value of 79.5% for the Ag NPs-coated WZO film. The bandgap energy of this film was calculated to be 3.17&#xa0;eV. The fabricated photodetector, comprising the Ag NP-modified WZO film and p-Si substrate, exhibited superior performance due to enhanced optical and electrical properties. Notably, the device achieved a responsivity (<i>R*</i>) of 4.83 A/W, a sensitivity (<i>S*</i>) of 60.82, and a detectivity (<i>D*</i>) of 5.06 × 10<sup>12</sup> Jones. Compared to the unmodified WZO/p-Si device, the Ag NP-coated photodetector displayed significant improvements: a 26% increase in <i>R*</i>, a 79% increase in <i>S*</i>, and a 53% increase in <i>D*</i>. These findings highlight the potential of incorporating metal nanoparticles into photosensitive devices to optimize light-matter interactions.</p>

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Photoresponsivity enhancement of W-doped ZnO film/Silicon based devices via silver nanoparticles

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月29日

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  • Ream Jalal,
  • Kenan Ozel,
  • Abdullah Atilgan,
  • Abdullah Yildiz

摘要

Silver nanoparticles (Ag NPs) were deposited onto a 2 at.% Tungsten (W)-doped ZnO (WZO)/p-Silicon (p-Si) UV photodetector using a cost-effective sol–gel method. Top-view scanning electron microscopy (SEM) images confirmed the uniform coating of Ag NPs. Cross-sectional SEM analysis revealed a WZO film thickness of 167 nm, including the Ag NP layer. UV–Vis spectroscopy demonstrated high transparency with an average value of 79.5% for the Ag NPs-coated WZO film. The bandgap energy of this film was calculated to be 3.17 eV. The fabricated photodetector, comprising the Ag NP-modified WZO film and p-Si substrate, exhibited superior performance due to enhanced optical and electrical properties. Notably, the device achieved a responsivity (R*) of 4.83 A/W, a sensitivity (S*) of 60.82, and a detectivity (D*) of 5.06 × 1012 Jones. Compared to the unmodified WZO/p-Si device, the Ag NP-coated photodetector displayed significant improvements: a 26% increase in R*, a 79% increase in S*, and a 53% increase in D*. These findings highlight the potential of incorporating metal nanoparticles into photosensitive devices to optimize light-matter interactions.