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<p>In this study, the magnetic field, hydrostatic pressure and temperature dependent electronic and optical properties of asymmetric quantum wells which have some exponential potentials in the absence and presence shallow donor impurities are investigated. Calculations are made within the framework of the effective mass and parabolic band approximations. In the absence and presence of the donor impurity, we calculated the total absorption coefficient including linear and nonlinear terms for transitions between the lowest two levels. In addition, by using a variational approach, we investigated the binding energies of the 1&#xa0;s and 2&#xa0;s donor impurity states The results show that the total absorption peaks shift to the blue shift with the effect of external perturbations, whereas redshift in the presence of impurities. This indicates that the impurities can effectively change the band gap of semiconductors, allowing the semiconductor to absorb lower energy photons, and making it possible to design materials with special optical properties such as light absorption and emission properties.</p>

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Effects of the magnetic field, hydrostatic pressure and temperature on binding energies and optical absorption of states with donor impurity in different type quantum wells

  • 期刊论文

  • 发表日期：

    2025年1月3日

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  • Esin Kasapoglu

摘要

In this study, the magnetic field, hydrostatic pressure and temperature dependent electronic and optical properties of asymmetric quantum wells which have some exponential potentials in the absence and presence shallow donor impurities are investigated. Calculations are made within the framework of the effective mass and parabolic band approximations. In the absence and presence of the donor impurity, we calculated the total absorption coefficient including linear and nonlinear terms for transitions between the lowest two levels. In addition, by using a variational approach, we investigated the binding energies of the 1 s and 2 s donor impurity states The results show that the total absorption peaks shift to the blue shift with the effect of external perturbations, whereas redshift in the presence of impurities. This indicates that the impurities can effectively change the band gap of semiconductors, allowing the semiconductor to absorb lower energy photons, and making it possible to design materials with special optical properties such as light absorption and emission properties.