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<p>This study investigates the optical and electrical properties of pure and doped P3HT: ICxA nanoparticles (NPs) with silver (Ag), cobalt (Co), and zinc (Zn), using an optical transfer matrix method (TMM) and a 1D drift–diffusion model in SCAPS for electrical analysis. Modeled current density and quantum efficiency (QE) simulation results were compared with experimental data for a standard P3HT: PCBM donor–acceptor system under 1 sun illumination. Dynamic light scattering (DLS) measurements indicated nanoparticle sizes around 50&#xa0;nm, consistent with field emission scanning electron microscopy (FESEM) images. Photoluminescence (PL) analysis revealed that P3HT: ICxA-Ag NPs exhibited the lowest charge dissociation, confirming enhanced charge generation and longer carrier lifetimes than Co-, Zn-doped, and pure samples. Optical modeling calculated the current densities for pure, Ag-, Co-, and Zn-doped devices as 6.648, 13.781, 11.819, and 9.160&#xa0;mA/cm<sup>2</sup>, respectively, assuming ideal device conditions with 100% internal quantum efficiency (IQE). These values were higher than SCAPS-simulated results, which reflected real device performance, exhibiting lower efficiency (0.472%) and a short-circuit current (Jsc) of 2.752&#xa0;mA/cm<sup>2</sup>. The findings suggest that doping with Ag and Co significantly enhances charge generation and electrical properties, improving device performance.</p>

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Plasmon effect on the P3HT: ICxA NPs active layer performance

  • 期刊论文

  • 发表日期：

    2025年1月22日

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  • Hussein Abdul Kareem,
  • Mohammed F. Al-Mudhaffer

摘要

This study investigates the optical and electrical properties of pure and doped P3HT: ICxA nanoparticles (NPs) with silver (Ag), cobalt (Co), and zinc (Zn), using an optical transfer matrix method (TMM) and a 1D drift–diffusion model in SCAPS for electrical analysis. Modeled current density and quantum efficiency (QE) simulation results were compared with experimental data for a standard P3HT: PCBM donor–acceptor system under 1 sun illumination. Dynamic light scattering (DLS) measurements indicated nanoparticle sizes around 50 nm, consistent with field emission scanning electron microscopy (FESEM) images. Photoluminescence (PL) analysis revealed that P3HT: ICxA-Ag NPs exhibited the lowest charge dissociation, confirming enhanced charge generation and longer carrier lifetimes than Co-, Zn-doped, and pure samples. Optical modeling calculated the current densities for pure, Ag-, Co-, and Zn-doped devices as 6.648, 13.781, 11.819, and 9.160 mA/cm2, respectively, assuming ideal device conditions with 100% internal quantum efficiency (IQE). These values were higher than SCAPS-simulated results, which reflected real device performance, exhibiting lower efficiency (0.472%) and a short-circuit current (Jsc) of 2.752 mA/cm2. The findings suggest that doping with Ag and Co significantly enhances charge generation and electrical properties, improving device performance.