Ion channels dynamics in an N-type locally active memristors-based neuromorphic circuit
摘要
Ion channels that open and close during polarization, depolarization and hyperpolarization can amplify the positive shift and the negative drop in membrane potential, and thereby facilitate the generation of an action potential. Neuromorphic circuits are capable of reproducing dynamics analogous to those observed in biological neurons. This paper proposes a memristive ion channel-based neuromorphic circuit, in which the electrophysiological behaviors of ion channels are modeled using a first-order N-type locally active memristor (1st-NLAM) for the calcium channel, a second-order (2nd) NLAM for the sodium channel, and a 1st-NLAM for the potassium channel. Numerical simulations demonstrate that the NLAM-based neuromorphic circuit can produce bursting activity under a low-frequency stimulus. Moreover, the memristive ion channels have a significant influence on the periodicity of periodic and chaotic spiking activities under a high-frequency stimulus. In particular, fold and Hopf bifurcation sets and bifurcation mechanisms for bursting activities are theoretically deduced. Moreover, hardware experiment validates the effectiveness of numerical simulations, demonstrating that the NLAM-based neuromorphic circuit can successfully reproduce bursting and spiking activities.