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<p>The article describes the prospects of applying lead-free relaxor ferroelectrics with the tetragonal tungsten bronze structure, such as barium-strontium niobate Sr<sub>0.6</sub>Ba<sub>0.4</sub>Nb<sub>2</sub>O (SBN60), in semiconductor technologies for the development of memory cells, pyroelectric matrices, and microelectromechanical systems. The dielectric and ferroelectric properties of SBN60 thin films (600 nm) were studied using dielectric spectroscopy methods, and the phase transition temperatures in these films were also analyzed. A&#xa0;SBN60 thin film with the tetragonal tungsten bronze structure was synthesized on a&#xa0;Si(001) semiconductor substrate. The film was grown using high-frequency cathode sputtering in an oxygen atmosphere. X‑ray diffraction analysis was used to show that SBN60 films are single-phase, pure, and <i>c</i>-oriented (unit cell parameter of <i>c</i> = 0.3932 nm). The obtained force microscopy data show that the surface relief of films is uniform and does not contain cavities, pores, or other surface defects. A&#xa0;method was developed for experimentally determining the permittivity and its dispersion, which is based on the results of measuring the high-frequency capacitance-voltage characteristics of the metal/SBN60/Si(001) capacitor structure at a&#xa0;fixed temperature within the range of 83–473 K. This method also provides a&#xa0;means to determine the temperatures of phase transition, both from the paraelectric to the ferroelectric phase and between different ferroelectric phases. In the analyzed film, the nucleation temperature of polar nanodomains was found to reach 383 K. The prospects of using this method to analyze the properties of metal-ferroelectric-semiconductor heterostructures are discussed.</p>

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A study of the dielectric and ferroelectric properties of SBN60 relaxor ferroelectric thin films on semiconductor substrates in a wide temperature range

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • Norayr V. Makinyan,
  • Anatoly V. Pavlenko,
  • Petr V. Popov,
  • Vyacheslav A. Bobylev,
  • Yana Yu. Matyash,
  • Daniil V. Stryukov

摘要

The article describes the prospects of applying lead-free relaxor ferroelectrics with the tetragonal tungsten bronze structure, such as barium-strontium niobate Sr0.6Ba0.4Nb2O (SBN60), in semiconductor technologies for the development of memory cells, pyroelectric matrices, and microelectromechanical systems. The dielectric and ferroelectric properties of SBN60 thin films (600 nm) were studied using dielectric spectroscopy methods, and the phase transition temperatures in these films were also analyzed. A SBN60 thin film with the tetragonal tungsten bronze structure was synthesized on a Si(001) semiconductor substrate. The film was grown using high-frequency cathode sputtering in an oxygen atmosphere. X‑ray diffraction analysis was used to show that SBN60 films are single-phase, pure, and c-oriented (unit cell parameter of c = 0.3932 nm). The obtained force microscopy data show that the surface relief of films is uniform and does not contain cavities, pores, or other surface defects. A method was developed for experimentally determining the permittivity and its dispersion, which is based on the results of measuring the high-frequency capacitance-voltage characteristics of the metal/SBN60/Si(001) capacitor structure at a fixed temperature within the range of 83–473 K. This method also provides a means to determine the temperatures of phase transition, both from the paraelectric to the ferroelectric phase and between different ferroelectric phases. In the analyzed film, the nucleation temperature of polar nanodomains was found to reach 383 K. The prospects of using this method to analyze the properties of metal-ferroelectric-semiconductor heterostructures are discussed.