<p>With the rapid growth of a high-tech industry that responds to heavy demand for semiconductors and optoelectronics, more hazardous chemicals are widely used in the manufacturing processes to produce electronic products. The high-tech industry often applies hydrogen peroxide solutions as etchants for etching electronic parts in wet chemical processes. Due to its strong oxidizing property and nature of thermal decomposition, hydrogen peroxide is thermally unstable when mixed with strong acids or reacts with metal ions. This study examines the thermally incompatible potential of various concentrations of hydrogen peroxide solution as an etchant by applying calorimetry and thermal analysis methodology. 30 mass% and 50 mass% hydrogen peroxide solutions are used as the etchant to confirm their exothermic characteristics, and then evaluate the exothermicity of SPM (sulfuric acid and hydrogen peroxide mixtures) and HPM (hydrochloric acid and hydrogen peroxide mixtures) etching solutions. Furthermore, SPM and HPM etchants separately add 1 mass% copper powder (Cu) and copper sulfate (CuSO₄) to evaluate the thermal incompatibility potential and to obtain the thermophysical data, such as exothermic initial temperature (<i>T</i>_i), exothermic peak temperature (<i>T</i>_p), reaction decomposition heat (Δ<i>H</i>_d), and so on. The Cu-inducing mechanism for SPM solutions is applied C⁺⁺ programming language to simulate the self-heating rate and time to the maximum rate.</p>