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<p>This study presents a comprehensive analysis of various hybrid solar cell structures based on copper oxide (CuO, Cu<sub>2</sub>O) and copper indium gallium selenide (CIGS) configurations. Three different architectures CuO/CIGS, Cu<sub>2</sub>O/CIGS, and CuO/Cu<sub>2</sub>O/CIGS were simulated using the solar cell capacitance simulator (SCAPS-1D) to investigate their optoelectronic properties and performance parameters. The influence of key factors including the CIGS absorber layer thickness (0.5–3.0 µm), acceptor density (10¹⁵–10¹⁷ cm⁻³), and defect density (10¹³–10¹⁵ cm⁻³) was systematically analyzed. Energy band diagrams were constructed to elucidate the charge carrier transport mechanisms at the heterojunction interfaces. The results demonstrate that the CuO/Cu<sub>2</sub>O/CIGS structure exhibits superior performance with a power conversion efficiency of up to 24.2% at optimized parameters, compared to 21.8% for Cu<sub>2</sub>O/CIGS and 24.2% for CuO/CIGS configurations. The enhanced performance is attributed to the favorable band alignment and reduced interface recombination in the triple-layer structure. This work provides valuable insights for designing high-efficiency thin-film solar cells and establishes optimal parameters for future experimental fabrication of copper oxide-CIGS hybrid photovoltaic devices.</p> Graphical Abstract <p></p>

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Hybrid semiconductor based on CuO/Cu2O/CIGS: analysis of photovoltaic properties

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月14日

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  • Abdelghani Rahal,
  • Idris Bouchama,
  • M. R. Khalladi,
  • M. A. Ghebouli,
  • M. Fatmi,
  • F. Benlakhdar,
  • S. Alomairy,
  • Mustafa Jaipallah Abdelmageed Abualreish,
  • Samah Saidi,
  • Aseel Smerat,
  • Murat Yaylacı

摘要

This study presents a comprehensive analysis of various hybrid solar cell structures based on copper oxide (CuO, Cu2O) and copper indium gallium selenide (CIGS) configurations. Three different architectures CuO/CIGS, Cu2O/CIGS, and CuO/Cu2O/CIGS were simulated using the solar cell capacitance simulator (SCAPS-1D) to investigate their optoelectronic properties and performance parameters. The influence of key factors including the CIGS absorber layer thickness (0.5–3.0 µm), acceptor density (10¹⁵–10¹⁷ cm⁻³), and defect density (10¹³–10¹⁵ cm⁻³) was systematically analyzed. Energy band diagrams were constructed to elucidate the charge carrier transport mechanisms at the heterojunction interfaces. The results demonstrate that the CuO/Cu2O/CIGS structure exhibits superior performance with a power conversion efficiency of up to 24.2% at optimized parameters, compared to 21.8% for Cu2O/CIGS and 24.2% for CuO/CIGS configurations. The enhanced performance is attributed to the favorable band alignment and reduced interface recombination in the triple-layer structure. This work provides valuable insights for designing high-efficiency thin-film solar cells and establishes optimal parameters for future experimental fabrication of copper oxide-CIGS hybrid photovoltaic devices.

Graphical Abstract