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<p>The sol–gel method was used in this work to create Cu and Ga-doped ZnO nanoparticles. The single-phase hexagonal wurtzite ZnO structure is shown by the doped ZnO nanoparticles’ XRD spectra. The addition of Cu and Ga has no effect on the wurtzite structure. The TEM images show that the formation of Cu and Ga-doped ZnO nanoparticles occurs in a range of sizes and has a spherical form. The sol–gel method yielded Cu and Ga-doped ZnO nanoparticles with average particle sizes of about 30–45 nm. For ZnO, ZnO_Cu, ZnO_Ga, and ZnO_Cu/Ga nanoparticles, the calculated bandgap values are 3.34 eV, 3.29 eV, 3.06 eV, and 3.11 eV, respectively. The Cu and Ga-doped ZnO nanoparticles’ luminescence spectra reveal emission that is concentrated in the 400–450 nm range. Magnetic measurements of Cu and Ga-doped ZnO nanoparticles show a diamagnetic behavior in the high field range. All of the nanoparticles have improved electrical conductivity, which makes them suitable for optoelectronic uses.</p><p></p>

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Cu/Ga doped ZnO nanoparticles with improved optoelectronic and magnetic characteristics produced using the sol–gel technique

  • 期刊论文

  • 发表日期：

    2026年2月5日

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  • K. Omri

摘要

The sol–gel method was used in this work to create Cu and Ga-doped ZnO nanoparticles. The single-phase hexagonal wurtzite ZnO structure is shown by the doped ZnO nanoparticles’ XRD spectra. The addition of Cu and Ga has no effect on the wurtzite structure. The TEM images show that the formation of Cu and Ga-doped ZnO nanoparticles occurs in a range of sizes and has a spherical form. The sol–gel method yielded Cu and Ga-doped ZnO nanoparticles with average particle sizes of about 30–45 nm. For ZnO, ZnO_Cu, ZnO_Ga, and ZnO_Cu/Ga nanoparticles, the calculated bandgap values are 3.34 eV, 3.29 eV, 3.06 eV, and 3.11 eV, respectively. The Cu and Ga-doped ZnO nanoparticles’ luminescence spectra reveal emission that is concentrated in the 400–450 nm range. Magnetic measurements of Cu and Ga-doped ZnO nanoparticles show a diamagnetic behavior in the high field range. All of the nanoparticles have improved electrical conductivity, which makes them suitable for optoelectronic uses.