Scholarlink

<p>Radon-222 (<sup>222</sup>Rn) monitoring is critical for assessing indoor air quality and mitigating radiological risks. This study investigates amorphous silicon carbide (SiC) thin films, deposited by RF magnetron sputtering, as passive sensing materials for radon detection. The films exhibited uniform morphology, strong adhesion, and controlled thickness, enabling their integration into Schottky diode structures (SiC/pSi(100)/Cu). Comprehensive characterization was performed using SEM, XRD, UV–Vis spectroscopy, XRF, AES, and electrical measurements. Optimized SiC films showed a thickness of ~ 1.12&#xa0;µm and an optical bandgap of 1.8&#xa0;eV. Electrical analyses revealed Schottky-type behavior with measurable sensitivity variations upon radon exposure. Sensors exposed to naturally occurring radioactive materials (NORM) for 43 and 71&#xa0;days demonstrated distinct current–voltage responses, attributed to radon diffusion and alpha particle ionization. The results confirm that amorphous SiC thin films can serve as room-temperature radon sensors, providing reproducible electrical responses under prolonged exposure. This work highlights the potential of SiC-based devices for environmental monitoring and radiation protection, while emphasizing the need for further optimization to enhance long-term stability and practical deployment.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Radon sensing using silicon carbide thin films deposited by RF magnetron sputtering

  • 期刊论文

  • 发表日期：

    2026年5月16日

查看全文
  • Naima Ait Kaci,
  • Samira Kaci,
  • Hamid Menari,
  • Khaled Hichem Bentoumi,
  • Abderezak Nechaf,
  • Abdelaziz Lachemet

摘要

Radon-222 (222Rn) monitoring is critical for assessing indoor air quality and mitigating radiological risks. This study investigates amorphous silicon carbide (SiC) thin films, deposited by RF magnetron sputtering, as passive sensing materials for radon detection. The films exhibited uniform morphology, strong adhesion, and controlled thickness, enabling their integration into Schottky diode structures (SiC/pSi(100)/Cu). Comprehensive characterization was performed using SEM, XRD, UV–Vis spectroscopy, XRF, AES, and electrical measurements. Optimized SiC films showed a thickness of ~ 1.12 µm and an optical bandgap of 1.8 eV. Electrical analyses revealed Schottky-type behavior with measurable sensitivity variations upon radon exposure. Sensors exposed to naturally occurring radioactive materials (NORM) for 43 and 71 days demonstrated distinct current–voltage responses, attributed to radon diffusion and alpha particle ionization. The results confirm that amorphous SiC thin films can serve as room-temperature radon sensors, providing reproducible electrical responses under prolonged exposure. This work highlights the potential of SiC-based devices for environmental monitoring and radiation protection, while emphasizing the need for further optimization to enhance long-term stability and practical deployment.