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<p>Poly (Thiophene) (PTh) is familiar for optoelectronic applications due to strong absorption, better conductivity, and high charge carrier mobility. However, it found low photoluminescence efficiency and variations in electron carrier mobility due to reduced photoluminescence. The motto of current research is to overcome the above drawback and enrich the optoelectronic behaviour of PTh featuring 30, 40, 50, and 60&#xa0;nm of zinc oxide (ZnO) nanoparticles (20&#xa0;nm) via the electrochemical deposition method. This structure consists of 100&#xa0;nm indium tin oxide (ITO), ZnO electron transport layer (ETL), ZnO/PTh active emission layer, PTh hole transport layer (HTL), and 80&#xa0;nm silver top electrode. The influences of ZnO quantum dot layer thickness and silver top electrode on optical, electrical, stability lifetime, and X-ray diffraction behaviour of PTh quantum dot are evaluated. The structural analyses confirmed improved structural integrity, and the stability evaluations showed enhanced operational lifetime. The 50&#xa0;nm ZnO:PTh active layer found better functional characteristics like reduced wavelength, enhanced electron voltage, higher photoluminescence efficiency, superior electron mobility, higher current density, and superior lifespan (life cycle), which are 3%, 4.5%, 61.5%, more than 100%, 107%, and more than 100% better than the PTh quantum dot LED.</p>

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Enhancement of photoluminescence efficiency and optoelectronic/life cycle properties of poly (Thiophene) featured with zinc oxide quantum dots with silver electrode

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • M. Aruna,
  • Nagabhooshanam Nagarajan,
  • Prahalad Singh Parihar,
  • Nilesh Bhosle,
  • S. Supriya,
  • V. S. N. Kumar,
  • Ramya Maranan,
  • Thirugnanasambandham T,
  • S. Sathiyamurthy

摘要

Poly (Thiophene) (PTh) is familiar for optoelectronic applications due to strong absorption, better conductivity, and high charge carrier mobility. However, it found low photoluminescence efficiency and variations in electron carrier mobility due to reduced photoluminescence. The motto of current research is to overcome the above drawback and enrich the optoelectronic behaviour of PTh featuring 30, 40, 50, and 60 nm of zinc oxide (ZnO) nanoparticles (20 nm) via the electrochemical deposition method. This structure consists of 100 nm indium tin oxide (ITO), ZnO electron transport layer (ETL), ZnO/PTh active emission layer, PTh hole transport layer (HTL), and 80 nm silver top electrode. The influences of ZnO quantum dot layer thickness and silver top electrode on optical, electrical, stability lifetime, and X-ray diffraction behaviour of PTh quantum dot are evaluated. The structural analyses confirmed improved structural integrity, and the stability evaluations showed enhanced operational lifetime. The 50 nm ZnO:PTh active layer found better functional characteristics like reduced wavelength, enhanced electron voltage, higher photoluminescence efficiency, superior electron mobility, higher current density, and superior lifespan (life cycle), which are 3%, 4.5%, 61.5%, more than 100%, 107%, and more than 100% better than the PTh quantum dot LED.