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<p>A novel acrylate monomer, (4-(acryloxy) phenyl) dimethylsulfonium trifluoromethanate (APDST) was prepared, which has the potential to be used to develop new radiation-sensitive polymers to meet the needs of the semiconductor industry. By free-radical polymerization of the monomer (4-(methylacryloxy) phenyl) dimethylsulfoniumtriflate (MAPDST) which has been demonstrated to be useful for extreme ultraviolet lithography (EUVL) with various monomers with different functionalities, including ethyl methacrylate (EMA), butyl methacrylate (BMA), phenyl methacrylate (PhMA), benzyl methacrylate (BzMA) and APDST monomer, a variety of novel organic polymers with highly radiation-sensitive sulfonium functionality were prepared to expand the array of photoresist polymers to improve their performance and applicability. The specific structures of prepared monomers and various polymers were characterized by fourier transform infrared spectrometer (FT-IR) and nuclear magnetic resonance hydrogen (<sup>1</sup>H NMR) spectroscopy. By testing the thermal stability, solubility and other properties of the photoresist polymers, the results show that the prepared polymers satisfy the basic requirements of the photolithography process, and have a great potential for EUVL application.</p>

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Design and synthesis of radiation-sensitive monomer and polymers for potential application in extreme ultraviolet lithography

  • 期刊论文

  • 发表日期：

    2025年5月30日

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  • Jingyi Gan,
  • Yuanzhuang Li,
  • Lei Yang,
  • Rui Wang,
  • Chenyu Zheng,
  • Guomin Xiao

摘要

A novel acrylate monomer, (4-(acryloxy) phenyl) dimethylsulfonium trifluoromethanate (APDST) was prepared, which has the potential to be used to develop new radiation-sensitive polymers to meet the needs of the semiconductor industry. By free-radical polymerization of the monomer (4-(methylacryloxy) phenyl) dimethylsulfoniumtriflate (MAPDST) which has been demonstrated to be useful for extreme ultraviolet lithography (EUVL) with various monomers with different functionalities, including ethyl methacrylate (EMA), butyl methacrylate (BMA), phenyl methacrylate (PhMA), benzyl methacrylate (BzMA) and APDST monomer, a variety of novel organic polymers with highly radiation-sensitive sulfonium functionality were prepared to expand the array of photoresist polymers to improve their performance and applicability. The specific structures of prepared monomers and various polymers were characterized by fourier transform infrared spectrometer (FT-IR) and nuclear magnetic resonance hydrogen (1H NMR) spectroscopy. By testing the thermal stability, solubility and other properties of the photoresist polymers, the results show that the prepared polymers satisfy the basic requirements of the photolithography process, and have a great potential for EUVL application.