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<p>In this paper, we compare qualitative properties of two-dimensional and three-dimensional mathematical models of the diffusion of particles (nonequilibrium minority charge carriers, excitons) generated by a sharply focused electron probe in a homogeneous semiconductor material. We show that the mathematical models considered are well posed and can be used for estimating electrophysical parameters of homogeneous semiconductor targets based on the results of experimental measurements.</p>

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ON THE WELL-POSEDNESS OF MATHEMATICAL MODELS OF DIFFUSION DUE TO A SHARPLY FOCUSED ELECTRON PROBE IN A HOMOGENEOUS SEMICONDUCTOR MATERIAL

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • M. A. Stepovich,
  • D. V. Turtin,
  • E. V. Seregina

摘要

In this paper, we compare qualitative properties of two-dimensional and three-dimensional mathematical models of the diffusion of particles (nonequilibrium minority charge carriers, excitons) generated by a sharply focused electron probe in a homogeneous semiconductor material. We show that the mathematical models considered are well posed and can be used for estimating electrophysical parameters of homogeneous semiconductor targets based on the results of experimental measurements.