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<p>In this study, high-quality glass-coated amorphous microwires (Co<sub>0.7</sub>Fe<sub>0.05</sub>Si<sub>0.15</sub>B<sub>0.1</sub>)<sub>100−x</sub>Cu<sub>x</sub> (x = 0, 1, and 2) with few impurity phases, good continuity, and uniformity were successfully prepared using an optimized high-frequency induction melt-drawing technology. This work systematically investigated the effects of the direct current (DC) annealing process on the magnetic properties and giant magnetoimpedance (GMI) effect of these microwires. It was found that Cu doping enhances the crystallization stability of the alloy to a certain extent, and an appropriate content of the Cu element can significantly enhance the GMI effect of the microwires. The nanocrystallization mechanism discussed later is inferred based on relevant literature reports.What’s more, the DC annealing not only remarkably reduces the coercivity (<i>H</i><sub>c</sub>) of the microwires, but also significantly improves their saturation magnetization (<i>M</i><sub>s</sub>) and GMI effect. After DC annealing with 25&#xa0;mA current, the <i>H</i><sub>c</sub> of (Co<sub>0.7</sub>Fe<sub>0.05</sub>Si<sub>0.15</sub>B<sub>0.1</sub>)<sub>98</sub>Cu<sub>2</sub> microwires decreased from 3.2&#xa0;A/m to 1.69&#xa0;A/m, and the <i>M</i><sub><i>s</i></sub> increased from 50.49 emu/g to 73.03 emu/g. Meanwhile, by optimizing Cu content and DC annealing parameters, this work demonstrates a highly effective route to achieving a GMI ratio of 687% in Co-based microwires, offering a practical processing strategy for advanced GMI sensor materials.</p>

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Giant magneto-impedance of Cu-doped Co-based glass-coated amorphous microwires

  • 期刊论文

  • 发表日期：

    2026年2月24日

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  • Shuangyou Li,
  • Jiacheng Zhang,
  • Chunbo Wang,
  • Xiaojie Xue,
  • Zhongyuan Yang,
  • Shuotong Zong,
  • Yan Zhang,
  • Hongxia Liu,
  • Zhigang Sun

摘要

In this study, high-quality glass-coated amorphous microwires (Co0.7Fe0.05Si0.15B0.1)100−xCux (x = 0, 1, and 2) with few impurity phases, good continuity, and uniformity were successfully prepared using an optimized high-frequency induction melt-drawing technology. This work systematically investigated the effects of the direct current (DC) annealing process on the magnetic properties and giant magnetoimpedance (GMI) effect of these microwires. It was found that Cu doping enhances the crystallization stability of the alloy to a certain extent, and an appropriate content of the Cu element can significantly enhance the GMI effect of the microwires. The nanocrystallization mechanism discussed later is inferred based on relevant literature reports.What’s more, the DC annealing not only remarkably reduces the coercivity (Hc) of the microwires, but also significantly improves their saturation magnetization (Ms) and GMI effect. After DC annealing with 25 mA current, the Hc of (Co0.7Fe0.05Si0.15B0.1)98Cu2 microwires decreased from 3.2 A/m to 1.69 A/m, and the Ms increased from 50.49 emu/g to 73.03 emu/g. Meanwhile, by optimizing Cu content and DC annealing parameters, this work demonstrates a highly effective route to achieving a GMI ratio of 687% in Co-based microwires, offering a practical processing strategy for advanced GMI sensor materials.