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<p>A model of the electronic mechanism of charge carrier pairing in real space in the family of bismuthate high-temperature superconducting oxides is presented, based on the experimental data of X-ray absorption spectroscopy using synchrotron radiation and X-ray free-electron laser radiation. It is shown that the decisive role in the implementation of the electron mechanism of pairing in BaBiO<InlineEquation ID="IEq3"> <EquationSource Format="TEX">\({_3}\)</EquationSource> </InlineEquation> belongs to the effect of disproportionation of the Bi6<i>s</i>–O2<i>p</i> bond in the form of local pairing of electrons and holes on neighboring octahedral complexes. A negative Anderson potential in bismuthates is assumed to arise from the Coulomb attraction between oppositely charged octahedral complexes</p>

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The Electronic Mechanism for Charge Carrier Pairing in Real Space in HTSC Oxides Based on BaBiO\({_3}\)

  • 期刊论文

  • 发表日期：

    2025年11月11日

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  • A. P. Menushenkov

摘要

A model of the electronic mechanism of charge carrier pairing in real space in the family of bismuthate high-temperature superconducting oxides is presented, based on the experimental data of X-ray absorption spectroscopy using synchrotron radiation and X-ray free-electron laser radiation. It is shown that the decisive role in the implementation of the electron mechanism of pairing in BaBiO \({_3}\) belongs to the effect of disproportionation of the Bi6s–O2p bond in the form of local pairing of electrons and holes on neighboring octahedral complexes. A negative Anderson potential in bismuthates is assumed to arise from the Coulomb attraction between oppositely charged octahedral complexes