The Hall effect of several single crystal and thin-film samples of YBa \(_{2}\) Cu \(_{3}\) O \(_{6+x}\) with different carrier concentration was measured in the temperature interval from \(T_{c}\) to \(T = 300 K\) . In this region, the Hall coefficient decreases exponentially with temperature according to a cut-off law where the characteristic parameter closely reproduces the pseudogap line when plotted as a function of the carrier concentration p. The strongly temperature-dependent Hall coefficient is interpreted in terms of the superposition of ordinary and anomalous Hall terms. The anomalous contribution is related to a Griffiths-type antiferromagnetic configuration that forms at the pseudogap line. The coefficients of the ordinary and anomalous terms show a complex dependence on the carrier concentration, suggesting the occurrence of a Fermi surface reconstruction at \(p\approx 0.14\) , where electron-type pockets are supposed to stabilize.
