<p>Multiferroic composites with the general formula (<InternalRef RefID="Equ1">1</InternalRef>-x) GaFeO<sub>3</sub>—(x) Co<sub>0.4</sub>Zn<sub>0.6</sub>Fe<sub>2</sub>O<sub>4</sub> (x = 0.0, 0.1, 0.3, and 1) were prepared by mixing chemically synthesized GaFeO<sub>3</sub> and Co<sub>0.4</sub>Zn<sub>0.6</sub>Fe<sub>2</sub>O<sub>4</sub> powders to investigate their room-temperature multiferroic properties. Rietveld refinement of X-ray diffraction data confirmed the presence of both phases in the composites, with no detectable impurities and expected stoichiometric compositional ratios. Temperature-dependent magnetization, M(T) and field-dependent magnetization, M(H) of the composites show an enhancement in magnetization and magnetic transition temperature, <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10948_2025_6997_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="35" /> </InlineMediaObject> <EquationSource Format="TEX">\(({T}_{N})\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo stretchy="false">(</mo> <msub> <mi>T</mi> <mi>N</mi> </msub> <mo stretchy="false">)</mo> </mrow> </math></EquationSource> </InlineEquation> compared to that of GaFeO<sub>3</sub>. Dielectric and ferroelectric measurements performed at room temperature over a 1&#xa0;Hz to 1&#xa0;MHz frequency range demonstrated improved dielectric properties relative to the individual parent compounds.</p>

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Room-Temperature Multiferroic Composites: Synthesis and Characterization of (1-x) GaFeO3 – x Co0.4Zn0.6Fe2O4

  • Saarthak Dulgaj,
  • A Devi,
  • Anshu Gaur,
  • Suman Karmakar,
  • Rajeev Rawat,
  • S Srinath

摘要

Multiferroic composites with the general formula (1-x) GaFeO3—(x) Co0.4Zn0.6Fe2O4 (x = 0.0, 0.1, 0.3, and 1) were prepared by mixing chemically synthesized GaFeO3 and Co0.4Zn0.6Fe2O4 powders to investigate their room-temperature multiferroic properties. Rietveld refinement of X-ray diffraction data confirmed the presence of both phases in the composites, with no detectable impurities and expected stoichiometric compositional ratios. Temperature-dependent magnetization, M(T) and field-dependent magnetization, M(H) of the composites show an enhancement in magnetization and magnetic transition temperature, \(({T}_{N})\) ( T N ) compared to that of GaFeO3. Dielectric and ferroelectric measurements performed at room temperature over a 1 Hz to 1 MHz frequency range demonstrated improved dielectric properties relative to the individual parent compounds.