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<p>We propose a&#xa0;serrated ultra—broadband infrared absorber based on the multi—layer repetitive stacking of indium tin oxide (ITO) and silicon materials. This absorber achieves continuously tunable absorption in the infrared light range from 1000 to 1600 nm. By changing the size and materials of the absorber, its average absorption rate reaches up to 86%, with a&#xa0;maximum tunable range of 0.157. Simulation results reveal wavelength-dependent electric field localization: shorter-wavelengths (e.g. 1195 nm) concentrate in narrower upper regions, while longer-wavelengths (e.g., 1507 nm) localize in wider lower regions. This design offers potential applications in near-infrared detectors, optical communication,and smart windows.</p>

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Tunable absorption in near infrared based on ITO

  • 期刊论文

  • 发表日期：

    2026年4月10日

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  • Shuai Shuai Hou,
  • Lin Cheng,
  • Nan Meng,
  • Naixin Liu,
  • Jian Chang Yan,
  • Jin Min Li,
  • Kun Huang,
  • Rui Xin Yang

摘要

We propose a serrated ultra—broadband infrared absorber based on the multi—layer repetitive stacking of indium tin oxide (ITO) and silicon materials. This absorber achieves continuously tunable absorption in the infrared light range from 1000 to 1600 nm. By changing the size and materials of the absorber, its average absorption rate reaches up to 86%, with a maximum tunable range of 0.157. Simulation results reveal wavelength-dependent electric field localization: shorter-wavelengths (e.g. 1195 nm) concentrate in narrower upper regions, while longer-wavelengths (e.g., 1507 nm) localize in wider lower regions. This design offers potential applications in near-infrared detectors, optical communication,and smart windows.