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<p>To understand the physical process of effective free carrier in silicon waveguide and silicon Raman laser, the numerical simulation on the output characteristics of effective free carrier with different parameters is performed in this paper. Based on the in silicon-on-insulator (SOI) waveguides, the free carrier density as a&#xa0;function of length along silicon with different pump power, free charge carrier lifetime, and effective mode area of the SOI waveguide are presented. In addition, the output characteristics of continuous-wave (CW) silicon Raman silicon laser with free carrier is investigated. The numerical simulation results reveal that the output efficiency of the Raman laser could be effectively improved by reducing the free carriers.</p>

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Theoretical investigation the effects of free carriers on silicon Raman laser

  • 期刊论文

  • 发表日期：

    2025年12月9日

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  • Wei Yin,
  • Dongya Song,
  • Ping Li

摘要

To understand the physical process of effective free carrier in silicon waveguide and silicon Raman laser, the numerical simulation on the output characteristics of effective free carrier with different parameters is performed in this paper. Based on the in silicon-on-insulator (SOI) waveguides, the free carrier density as a function of length along silicon with different pump power, free charge carrier lifetime, and effective mode area of the SOI waveguide are presented. In addition, the output characteristics of continuous-wave (CW) silicon Raman silicon laser with free carrier is investigated. The numerical simulation results reveal that the output efficiency of the Raman laser could be effectively improved by reducing the free carriers.