Low-temperature electronic transport properties of electron-doped La0.9Zr0.1MnO3 manganite systems have been reported. The temperature-dependent resistivity results exhibit metal to insulator transition (MIT). Three independent MI transitions are observed throughout the studied temperature range (4K–300K). In this study, we focused on the third transition (resistivity upturn) occurring at a relatively low temperature of approximately 48K (see Fig. 1). The other two transitions occurring at higher temperature have been reported elsewhere. The resistivity versus temperature measurements under zero applied magnetic field exhibit an upturn at very low-temperature Tmin~48(K) and the transition temperature shifts towards lower temperature under applied magnetic field. The observed phase transition at such a low temperature has been studied qualitatively and quantitatively using spin-dependent Kondo and e-e scattering models independently. It was concluded that neither of the two independent models fits the observed data satisfactorily. However, the simultaneous contribution of both the models however demonstrated better fitting and is consistent with the experimental results. Controlling phase transitions at low temperatures enables the development of advanced electronic and quantum devices, including transistors, memory units, sensors, switches, and quantum computing components.
