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<p>Boron and Sulphur doped carbon quantum dots (B, S-CQDs) are derived from bio-waste Aerva Javanica (AJ) by using hydrothermal method. Structural and morphological analyses were carried out by using SEM, TEM, FTIR, XRD, BET and XPS etc., which confirmed the effective incorporation of B and S into the CQDs matrix, forming a hierarchical architecture with an excellent specific surface area (SSA 908 m<sup>2</sup> g<sup>− 1</sup>) and uniform elemental dispersion. The results show that doping of B and S can effectively increase the pore number and electronic properties of B, S-CQDs. Electrochemical measurements demonstrated a good Specific Capacitance (C<sub>sp</sub>) of 470&#xa0;F g<sup>− 1</sup> at 0.01&#xa0;V s<sup>− 1</sup> and 410&#xa0;F g<sup>− 1</sup> at 1 Ag<sup>− 1</sup>, along with a low charge transfer resistance ( R<sub>2</sub> = 0.8 ). The B, S-CQDs-based electrode material operated at 1.0&#xa0;V, delivering an excellent capacitance retention (99.1%) and coulombic efficiency (95.5%) over five thousands cycles, signifying its strong potential for next-generation SCs.</p>

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Incorporation of Boron and Sulphur into Sustainable Carbon Quantum Dots as Electrode Material for Boosting the Electronic Performance of Supercapacitor

  • 期刊论文

  • 发表日期：

    2026年5月13日

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  • Suman Suman,
  • Gita Rani,
  • Anu Bala,
  • Siddharth,
  • Sunil Kumar

摘要

Boron and Sulphur doped carbon quantum dots (B, S-CQDs) are derived from bio-waste Aerva Javanica (AJ) by using hydrothermal method. Structural and morphological analyses were carried out by using SEM, TEM, FTIR, XRD, BET and XPS etc., which confirmed the effective incorporation of B and S into the CQDs matrix, forming a hierarchical architecture with an excellent specific surface area (SSA 908 m2 g− 1) and uniform elemental dispersion. The results show that doping of B and S can effectively increase the pore number and electronic properties of B, S-CQDs. Electrochemical measurements demonstrated a good Specific Capacitance (Csp) of 470 F g− 1 at 0.01 V s− 1 and 410 F g− 1 at 1 Ag− 1, along with a low charge transfer resistance ( R2 = 0.8 ). The B, S-CQDs-based electrode material operated at 1.0 V, delivering an excellent capacitance retention (99.1%) and coulombic efficiency (95.5%) over five thousands cycles, signifying its strong potential for next-generation SCs.