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<p>Despite its extensive utility in energy storage technologies, the natural biopolymer chitosan exhibits relatively inferior dielectric properties compared to advanced synthetic polymers. To overcome this limitation, multi-gradient composite films were synthesized via a facile solution casting and ultrasonic dispersion method, where zirconium dioxide (ZrO<sub>2</sub>), iron(III) oxide (Fe<sub>2</sub>O<sub>3</sub>), and manganese dioxide (MnO<sub>2</sub>) fillers were sequentially incorporated into the chitosan matrix. Optical analyses revealed a systematic narrowing of the direct bandgap from 5.8&#xa0;eV for pure chitosan to 5.5&#xa0;eV for the fully doped chitosan/ZrO<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub>/MnO<sub>2</sub> composite. Broad-band dielectric spectroscopy demonstrated that the dielectric constant (ε′) maximizes at low frequencies; notably, the chitosan/ZrO<sub>2</sub> film achieved a peak value of approximately 3400, which subsequently decreased to nearly 400 and 600 upon the successive addition of Fe<sub>2</sub>O<sub>3</sub> and MnO<sub>2</sub>, respectively. Furthermore, the alternating current (AC) conductivity (σ<sub>ac</sub>) profiles confirmed a hopping charge transport mechanism, highlighting the crucial role of the mineral oxides in intentionally tuning the electrical response. In conclusion, this sequential doping strategy successfully transitions the composite from a high-dielectric material to a highly conductive system, establishing these tailored chitosan-based films as highly versatile candidates for advanced optoelectronic and flexible electronic applications.</p>

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Reinforcement of Chitosan Films with Zirconium, Iron, and Manganese Oxides for Superior AC Conductivity and Dielectric Performance in Electrical Devices

  • 期刊论文

  • 发表日期：

    2026年7月4日

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  • Doaa Domyati,
  • Walaa Alharbi,
  • A. A. Menazea,
  • Mashael M. Alharbi,
  • M. A. El-Morsy

摘要

Despite its extensive utility in energy storage technologies, the natural biopolymer chitosan exhibits relatively inferior dielectric properties compared to advanced synthetic polymers. To overcome this limitation, multi-gradient composite films were synthesized via a facile solution casting and ultrasonic dispersion method, where zirconium dioxide (ZrO2), iron(III) oxide (Fe2O3), and manganese dioxide (MnO2) fillers were sequentially incorporated into the chitosan matrix. Optical analyses revealed a systematic narrowing of the direct bandgap from 5.8 eV for pure chitosan to 5.5 eV for the fully doped chitosan/ZrO2/Fe2O3/MnO2 composite. Broad-band dielectric spectroscopy demonstrated that the dielectric constant (ε′) maximizes at low frequencies; notably, the chitosan/ZrO2 film achieved a peak value of approximately 3400, which subsequently decreased to nearly 400 and 600 upon the successive addition of Fe2O3 and MnO2, respectively. Furthermore, the alternating current (AC) conductivity (σac) profiles confirmed a hopping charge transport mechanism, highlighting the crucial role of the mineral oxides in intentionally tuning the electrical response. In conclusion, this sequential doping strategy successfully transitions the composite from a high-dielectric material to a highly conductive system, establishing these tailored chitosan-based films as highly versatile candidates for advanced optoelectronic and flexible electronic applications.