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<p>Germanium-based chalcogenide glass is a potential candidate for phase-change memory devices as well as photonic devices based on their thermal and optical properties. The present work focuses on the systematic study of the structural properties as well as the optical properties of Ge<sub>x</sub>(SbTe<sub>2</sub>)<sub>0.60</sub>Se<sub>0.40-x</sub> thin film samples. The XRD studies showed the amorphous nature of all the samples, while FE-SEM studies were carried out on the samples to study their surface morphology. The optical properties were carried out to study the electronic band structure of the samples through band gap as well as Urbach energy studies. The dispersion parameters were also calculated to study the interband transitions of the samples. The linear as well as nonlinear optical properties of the samples were also analyzed through refractive index as well as dielectric constant studies.</p>

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Optical Constants and Band Gap Engineering in Ge-Doped (SbTe2)Se Thin Films for Phase-Change Memory Applications

  • 期刊论文

  • 发表日期：

    2026年4月10日

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  • Akhileshwar Mishra,
  • D. K. Dwivedi,
  • Upendra Kulshrestha

摘要

Germanium-based chalcogenide glass is a potential candidate for phase-change memory devices as well as photonic devices based on their thermal and optical properties. The present work focuses on the systematic study of the structural properties as well as the optical properties of Gex(SbTe2)0.60Se0.40-x thin film samples. The XRD studies showed the amorphous nature of all the samples, while FE-SEM studies were carried out on the samples to study their surface morphology. The optical properties were carried out to study the electronic band structure of the samples through band gap as well as Urbach energy studies. The dispersion parameters were also calculated to study the interband transitions of the samples. The linear as well as nonlinear optical properties of the samples were also analyzed through refractive index as well as dielectric constant studies.