<p>Halide perovskites are a strong candidate for efficient photovoltaic applications because of their great optical characteristics, high efficiency, affordability, and lightweight design. This research explores a solar cell with two absorbers that uses Cs<sub>2</sub>AgInBr<sub>6</sub> as the bottom absorber and Cs<sub>4</sub>CuSb<sub>2</sub>Cl<sub>12</sub> as the top absorber, employing SCAPS-1D simulations. The main goal is to enhance the device structure for optimal efficiency. To do this, the thickness of the two active layers is adjusted to ensure current matching. The study examines how factors like electron transport layers, absorber thickness, temperature, defect density, metal-work function, and series and shunt resistance affect the device’s performance. Among various configurations, the Al/ITO/WS<sub>2</sub>/Cs<sub>2</sub>AgInBr<sub>6</sub>/Cs<sub>4</sub>CuSb<sub>2</sub>Cl<sub>12</sub>/Au setup showed the best performance, achieving a V<sub>OC</sub> of 1.33&#xa0;V, an FF of 86.95%, a J<sub>SC</sub> of 27.72&#xa0;mA/cm<sup>2</sup>, and a maximum PCE of 32.17%. Improving band alignment, boosting charge transport, increasing stability, fine-tuning WS<sub>2</sub> characteristics, and creating scalable manufacturing methods.</p>

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Exploring the Possibilities of Lead-Free Cs2AgInBr6 and Cs4CuSb2Cl12 Double Perovskite Solar Cells with 32.17% Efficiency Using Multiple ETLs

  • Dipta Roy,
  • Md. Shamim Reza,
  • Avijit Ghosh,
  • Hmoud Al-Dmour,
  • H. A. Alrafai,
  • Abeer A. Hassan

摘要

Halide perovskites are a strong candidate for efficient photovoltaic applications because of their great optical characteristics, high efficiency, affordability, and lightweight design. This research explores a solar cell with two absorbers that uses Cs2AgInBr6 as the bottom absorber and Cs4CuSb2Cl12 as the top absorber, employing SCAPS-1D simulations. The main goal is to enhance the device structure for optimal efficiency. To do this, the thickness of the two active layers is adjusted to ensure current matching. The study examines how factors like electron transport layers, absorber thickness, temperature, defect density, metal-work function, and series and shunt resistance affect the device’s performance. Among various configurations, the Al/ITO/WS2/Cs2AgInBr6/Cs4CuSb2Cl12/Au setup showed the best performance, achieving a VOC of 1.33 V, an FF of 86.95%, a JSC of 27.72 mA/cm2, and a maximum PCE of 32.17%. Improving band alignment, boosting charge transport, increasing stability, fine-tuning WS2 characteristics, and creating scalable manufacturing methods.