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<p>In this work, porous silicon (P–Si) substrates were fabricated by electrochemical anodization, followed by the deposition of pure TiO<sub>2</sub> and Ni-doped TiO<sub>2</sub> nanoballs (NBs) using the RF magnetron sputtering technique. Structural, surface morphological, chemical composition, and gas sensing properties of the prepared thin film were studied to investigate the effect of Ni doping on the sensing performance. NO<sub>2</sub> gas sensing performance was enhanced by increasing the surface area and reactivity of Ni-doped TiO<sub>2</sub> nanoball sensors. Nickel doping was employed to modify the electronic properties of TiO<sub>2</sub> and improve gas adsorption. The Ni-doped TiO<sub>2</sub> sensor exhibited higher surface reactivity and improved sensing performance compared to bare TiO<sub>2</sub>, particularly at low NO<sub>2</sub> concentrations (2–50&#xa0;ppm) and a reduced operating temperature of 180&#xa0;°C. NO<sub>2</sub> detection at low operating temperatures is of great significance for environmental monitoring and industrial safety purposes. Basically, it enhances sensor stability, reduces the power consumption, and facilitates precise integration into portable sensing devices. The Ni-doped TiO<sub>2</sub> nanoball-based sensor synthesized on the P–Si substrate revealed high NO<sub>2</sub> sensing performance at a low operating temperature of 180&#xa0;°C, indicating a high sensing response of ~ 72% toward 10&#xa0;ppm NO<sub>2</sub>, with response and recovery times of 46 and 82&#xa0;s, respectively. The proposed sensor also exhibited good selectivity toward NO<sub>2</sub> with respect to other interfering gases, together with excellent cyclability and long-term stability. Additionally, the sensor demonstrated good selectivity, stability, repeatability, and cyclability. These results highlight porous silicon as an effective template for developing high-performance NO<sub>2</sub> gas sensors at lower operating temperatures.</p>

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Growth of Ni-doped TiO2 nanoballs for low temperature NO2 gas sensing applications

  • 期刊论文

  • 发表日期：

    2026年7月28日

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  • Sukriti Dahiya,
  • Arvind Kumar,
  • Sunil Kumar Tobriya,
  • Rashmi Singh,
  • Babita Gupta,
  • Rajeev Kumar Singh,
  • Mantesh Kumari Yadav

摘要

In this work, porous silicon (P–Si) substrates were fabricated by electrochemical anodization, followed by the deposition of pure TiO2 and Ni-doped TiO2 nanoballs (NBs) using the RF magnetron sputtering technique. Structural, surface morphological, chemical composition, and gas sensing properties of the prepared thin film were studied to investigate the effect of Ni doping on the sensing performance. NO2 gas sensing performance was enhanced by increasing the surface area and reactivity of Ni-doped TiO2 nanoball sensors. Nickel doping was employed to modify the electronic properties of TiO2 and improve gas adsorption. The Ni-doped TiO2 sensor exhibited higher surface reactivity and improved sensing performance compared to bare TiO2, particularly at low NO2 concentrations (2–50 ppm) and a reduced operating temperature of 180 °C. NO2 detection at low operating temperatures is of great significance for environmental monitoring and industrial safety purposes. Basically, it enhances sensor stability, reduces the power consumption, and facilitates precise integration into portable sensing devices. The Ni-doped TiO2 nanoball-based sensor synthesized on the P–Si substrate revealed high NO2 sensing performance at a low operating temperature of 180 °C, indicating a high sensing response of ~ 72% toward 10 ppm NO2, with response and recovery times of 46 and 82 s, respectively. The proposed sensor also exhibited good selectivity toward NO2 with respect to other interfering gases, together with excellent cyclability and long-term stability. Additionally, the sensor demonstrated good selectivity, stability, repeatability, and cyclability. These results highlight porous silicon as an effective template for developing high-performance NO2 gas sensors at lower operating temperatures.