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<p>This study investigates the frequency- and temperature-dependent dielectric properties, electric modulus, impedance behavior, and AC conductivity of PVA/PVP/MoS<sub>2</sub>/SiC quaternary nanocomposite films fabricated via solution casting with constant MoS₂ (5 wt%) and varying SiC contents (0, 1, 3, 5 wt%). XRD confirmed increased amorphosity with filler loading, while FTIR validated polymer-filler interactions through hydrogen bonding. Dielectric properties exhibited strong frequency and temperature dependence due to interfacial polarization. Notably, the 3 wt% SiC composite achieved the highest energy density (0.033 × 10<sup>3</sup>&#xa0;μJ/m<sup>3</sup>)—~80% higher than the pure blend—despite possessing the lowest dielectric constant (56.99 at 1&#xa0;kHz, 363&#xa0;K), attributed to micro-capacitor network formation and enhanced charge trapping. Electric modulus and impedance analyses revealed non-Debye relaxation behavior and composition-dependent bulk resistance, with the 3 wt% SiC sample exhibiting maximum resistance and minimum AC conductivity (2.466 × 10<sup>−6</sup> S/m). Correlated barrier hopping (CBH) was identified as the primary conduction mechanism. These findings demonstrate that intermediate SiC concentrations (3 wt%) optimize energy storage performance, positioning these nanocomposites as promising candidates for flexible energy storage and microelectronic applications.</p>

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Structural, dielectric, and impedance spectroscopy studies of PVA/PVP/MoS2/SiC nanocomposite films: effect of SiC concentration and temperature

  • 期刊论文

  • 发表日期：

    2026年7月28日

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  • Mohammed S. Alqahtani,
  • A. M. Kamal,
  • A. M. El-naggar

摘要

This study investigates the frequency- and temperature-dependent dielectric properties, electric modulus, impedance behavior, and AC conductivity of PVA/PVP/MoS2/SiC quaternary nanocomposite films fabricated via solution casting with constant MoS₂ (5 wt%) and varying SiC contents (0, 1, 3, 5 wt%). XRD confirmed increased amorphosity with filler loading, while FTIR validated polymer-filler interactions through hydrogen bonding. Dielectric properties exhibited strong frequency and temperature dependence due to interfacial polarization. Notably, the 3 wt% SiC composite achieved the highest energy density (0.033 × 103 μJ/m3)—~80% higher than the pure blend—despite possessing the lowest dielectric constant (56.99 at 1 kHz, 363 K), attributed to micro-capacitor network formation and enhanced charge trapping. Electric modulus and impedance analyses revealed non-Debye relaxation behavior and composition-dependent bulk resistance, with the 3 wt% SiC sample exhibiting maximum resistance and minimum AC conductivity (2.466 × 10−6 S/m). Correlated barrier hopping (CBH) was identified as the primary conduction mechanism. These findings demonstrate that intermediate SiC concentrations (3 wt%) optimize energy storage performance, positioning these nanocomposites as promising candidates for flexible energy storage and microelectronic applications.