Scholarlink

<p>Cadmium (Cd)-doped In<sub>2</sub>O<sub>3</sub> thin films with dopant concentrations of 1.5, 3.0 and 4.5 wt.% were successfully deposited by the jet nebulizer spray pyrolysis (JNSP) technique and investigated for heterojunction photodiode applications. X-ray diffraction analysis confirmed the formation of the cubic bixbyite phase of In<sub>2</sub>O<sub>3</sub> with systematic changes in crystallite size and lattice strain upon Cd incorporation. Optical studies revealed enhanced UV absorption and a gradual reduction in the optical bandgap from 4.10 to 3.60&#xa0;eV with increasing Cd concentration, indicating effective band structure modulation through defect engineering. FESEM and EDX analyses demonstrated uniform film coverage and homogeneous dopant distribution within the oxide matrix. Temperature-dependent electrical measurements showed improved conductivity and reduced resistivity with Cd doping, which is attributed to increased donor-state density and oxygen vacancy-assisted charge transport. The fabricated n-In<sub>2</sub>O<sub>3</sub>/p-Si heterojunction photodiodes exhibited clear rectifying characteristics under dark and illuminated conditions. Among all compositions, the 4.5 wt.% Cd-doped device showed improved diode parameters, including a lower ideality factor, higher barrier height, enhanced photosensitivity and higher&#xa0;detectivity. These results demonstrate that controlled Cd incorporation is an effective approach for tuning the structural and optoelectronic properties of In<sub>2</sub>O<sub>3</sub> thin films for photodetector applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Cadmium-doped In2O3 thin films for high-barrier photodiodes

  • 期刊论文

  • 发表日期：

    2026年7月30日

查看全文
  • M. Nithyaroja,
  • D. Selleswari,
  • R. Marnadu,
  • S. AlFaify,
  • Mohd Shkir

摘要

Cadmium (Cd)-doped In2O3 thin films with dopant concentrations of 1.5, 3.0 and 4.5 wt.% were successfully deposited by the jet nebulizer spray pyrolysis (JNSP) technique and investigated for heterojunction photodiode applications. X-ray diffraction analysis confirmed the formation of the cubic bixbyite phase of In2O3 with systematic changes in crystallite size and lattice strain upon Cd incorporation. Optical studies revealed enhanced UV absorption and a gradual reduction in the optical bandgap from 4.10 to 3.60 eV with increasing Cd concentration, indicating effective band structure modulation through defect engineering. FESEM and EDX analyses demonstrated uniform film coverage and homogeneous dopant distribution within the oxide matrix. Temperature-dependent electrical measurements showed improved conductivity and reduced resistivity with Cd doping, which is attributed to increased donor-state density and oxygen vacancy-assisted charge transport. The fabricated n-In2O3/p-Si heterojunction photodiodes exhibited clear rectifying characteristics under dark and illuminated conditions. Among all compositions, the 4.5 wt.% Cd-doped device showed improved diode parameters, including a lower ideality factor, higher barrier height, enhanced photosensitivity and higher detectivity. These results demonstrate that controlled Cd incorporation is an effective approach for tuning the structural and optoelectronic properties of In2O3 thin films for photodetector applications.