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<p>Memristor arrays are the core hardware for high-density computing-in-memory. However, their large-scale application still faces critical bottlenecks: the intrinsic randomness of conductive filaments (CFs) leads to aggravated resistive variability, and the effect of the resistive switching regulation mechanism on the multilevel resistances of the memristors with cross-structured electrodes remains unrevealed. To address these issues, this study designed and fabricated two HfO<sub>2</sub>-based nonvolatile memristors with cross-structured electrodes: Pt/TaO<sub>x</sub>/HfO<sub>2</sub>/TiN and Pt/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/TiN. Systematic measurements were performed on core electrical properties including direct-current I–V characteristics, cycling endurance(&gt; 10<sup>6</sup> cycles), and resistive state retention(&gt; 10<sup>4</sup> s), and the effects of electrode structure variation on resistive switching performance were comparatively analyzed.. The variability of multilevel conductance states was quantified through cycle-to-cycle (C2C) and device-to-device (D2D) cycling tests. An 8-unit parallel memristor circuit was further constructed to verify the reliability of multiply-accumulate (MAC). To further validate the reliability of MAC operations, an 8-unit parallel memristor circuit was constructed in this study. The repeated MAC measurements demonstrated that the Pt/TaO<sub>x</sub>/HfO<sub>2</sub>/TiN array exhibits a significantly lower coefficient of variation (CV) of the total output current than the Pt/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/TiN array, thereby exhibiting superior operational reliability in parallel computing. This work provides experimental and mechanistic references for the subsequent integration of high-density memristor arrays.</p>

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Evaluation of resistive switching modulation and multilevel conductance variability of memristors with cross-structured electrodes for MAC computing

  • 期刊论文

  • 发表日期：

    2026年7月16日

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  • You Wang,
  • Weidong Yu,
  • Lanxin Bian,
  • Yihui Hu,
  • Hui Wu,
  • Jiacheng Zhou,
  • Huaxian Liang,
  • Nan Tian,
  • Shizhe Lin,
  • Yingqiang Yan,
  • Baolin Zhang

摘要

Memristor arrays are the core hardware for high-density computing-in-memory. However, their large-scale application still faces critical bottlenecks: the intrinsic randomness of conductive filaments (CFs) leads to aggravated resistive variability, and the effect of the resistive switching regulation mechanism on the multilevel resistances of the memristors with cross-structured electrodes remains unrevealed. To address these issues, this study designed and fabricated two HfO2-based nonvolatile memristors with cross-structured electrodes: Pt/TaOx/HfO2/TiN and Pt/Al2O3/HfO2/TiN. Systematic measurements were performed on core electrical properties including direct-current I–V characteristics, cycling endurance(> 106 cycles), and resistive state retention(> 104 s), and the effects of electrode structure variation on resistive switching performance were comparatively analyzed.. The variability of multilevel conductance states was quantified through cycle-to-cycle (C2C) and device-to-device (D2D) cycling tests. An 8-unit parallel memristor circuit was further constructed to verify the reliability of multiply-accumulate (MAC). To further validate the reliability of MAC operations, an 8-unit parallel memristor circuit was constructed in this study. The repeated MAC measurements demonstrated that the Pt/TaOx/HfO2/TiN array exhibits a significantly lower coefficient of variation (CV) of the total output current than the Pt/Al2O3/HfO2/TiN array, thereby exhibiting superior operational reliability in parallel computing. This work provides experimental and mechanistic references for the subsequent integration of high-density memristor arrays.