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<p>Magnetoelectric properties of Bi<sub>0.85</sub>Sb<sub>0.15</sub> &lt; Te<sub>x</sub> &gt; (x = 0.0005 at.%) solid solution samples with grain sizes of 2 × 10<sup>5</sup>, 38, 32, and 15&#xa0;nm were studied in the of 77 ÷ 300&#xa0;K and magnetic field strength up to ~ 74 × 10<sup>4</sup> A/m. Samples that had not undergone annealing and the same samples that had undergone optimal annealing were examined. During heat treatment, <i>σ</i> increases by approximately ~ 2 times in pure and tellurium-doped samples with grain sizes of 630&#xa0;μm, while the effect of <i>σ</i> on heat treatment is weakened in samples (pure and tellurium-doped) with sizes of 38, 32, and 15&#xa0;nm. In tellurium-doped samples with grain sizes of 38 and 32&#xa0;nm, the effect of heat treatment is greater than in undoped samples with the same grain sizes. The dependence of electrical parameters on nanoparticle size and heat treatment shows that the texture formed during plastic deformation plays a predominant role in the scattering of charge carriers at low temperatures.</p>

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Galvanomagnetic properties of bulk nanostructured extruded Bi0.85Sb0.15 ⟨Te⟩ samples

  • 期刊论文

  • 发表日期：

    2026年7月29日

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  • M. M. Tagiyev,
  • Kh. F. Aliyeva

摘要

Magnetoelectric properties of Bi0.85Sb0.15 < Tex > (x = 0.0005 at.%) solid solution samples with grain sizes of 2 × 105, 38, 32, and 15 nm were studied in the of 77 ÷ 300 K and magnetic field strength up to ~ 74 × 104 A/m. Samples that had not undergone annealing and the same samples that had undergone optimal annealing were examined. During heat treatment, σ increases by approximately ~ 2 times in pure and tellurium-doped samples with grain sizes of 630 μm, while the effect of σ on heat treatment is weakened in samples (pure and tellurium-doped) with sizes of 38, 32, and 15 nm. In tellurium-doped samples with grain sizes of 38 and 32 nm, the effect of heat treatment is greater than in undoped samples with the same grain sizes. The dependence of electrical parameters on nanoparticle size and heat treatment shows that the texture formed during plastic deformation plays a predominant role in the scattering of charge carriers at low temperatures.