<p>Controlling magnetic anisotropy during film growth is crucial for the development of next-generation spintronic and magnetic sensing devices. Transferrable, magnetically anisotropic CoFe₂O₄ and NiFe₂O₄ films were grown under out-of-plane and in-plane magnetic fields to investigate the effect of field orientation on their structural, morphological and magnetic properties. The films grown without an applied magnetic field were polycrystalline, whereas the application of magnetic field induced anisotropic growth with a preferred (220) orientation in both films. The out-of-plane and in-plane magnetic field resulted in vertical and lateral grain alignment, respectively. The applied magnetic field significantly enhanced texture in the films, increasing the lotgering factor from 0.40 (CoFe₂O₄) and 0.42 (NiFe₂O₄) to nearly unity under both in-plane and out-of-plane magnetic fields. Compared to in-plane field grown films, those grown under out-of-plane magnetic field showed smoother and more uniform surfaces. CoFe₂O₄ films showed stronger field-induced responses than NiFe₂O₄, evidenced by significantly increase in saturation magnetization (29.38 to 133.75 emu/cm³), coercivity (79.92 to 2301.12 Oe), and magnetocrystalline anisotropy (2.44 × 10³ to 318.61 × 10³ erg/cm³). Magnetic hysteresis loops were recorded at angular orientations of 0°, 90°, 180°, and 270° relative to the direction of the magnetic field applied during film growth. The angular-dependent magnetic measurements showed significant improvement in magnetic properties, particularly for films grown under in-plane magnetic fields. The findings demonstrate that the magnetic field assisted growth can provide a way for tuneable crystallographic orientation with magnetic anisotropy in magnetic films for suitable magnetic device applications.</p>