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<p>In this work, the effect of α-particle irradiation with fluences of 5 × 10<sup>14</sup> and 1 × 10<sup>15</sup>&#xa0;cm<sup>−2</sup> on the electrophysical properties of n-type silicon doped with palladium is investigated by the method of impedance spectroscopy as a function of the diffusion temperature. A comparative analysis of all sample series shows that α-particle irradiation in all cases leads to an increase in electrical resistance due to the accumulation of radiation-induced defects and carrier compensation. Palladium doping significantly reduces the initial resistivity and mitigates the degree of degradation of electrical properties under irradiation. Increasing the doping temperature from 1100 to 1200&#xa0;°C results in the formation of a more radiation-resistant defect structure, in which a significant fraction of radiation defects is effectively bound into electrically less active complexes.</p>

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Effect of alpha particles on the electrophysical properties of silicon doped with palladium atoms

  • 期刊论文

  • 发表日期：

    2026年7月12日

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  • Sh. B. Utamuradova,
  • D. A. Rakhmanov,
  • A. S. Doroshkevich,
  • Zh. V. Mezentseva,
  • R. Sh. Isayev,
  • A. Tatarinova

摘要

In this work, the effect of α-particle irradiation with fluences of 5 × 1014 and 1 × 1015 cm−2 on the electrophysical properties of n-type silicon doped with palladium is investigated by the method of impedance spectroscopy as a function of the diffusion temperature. A comparative analysis of all sample series shows that α-particle irradiation in all cases leads to an increase in electrical resistance due to the accumulation of radiation-induced defects and carrier compensation. Palladium doping significantly reduces the initial resistivity and mitigates the degree of degradation of electrical properties under irradiation. Increasing the doping temperature from 1100 to 1200 °C results in the formation of a more radiation-resistant defect structure, in which a significant fraction of radiation defects is effectively bound into electrically less active complexes.