<p>This study investigates the tunability of the electrical and dielectric properties of polyvinylidene fluoride (PVDF) through the incorporation of multi-walled carbon nanotubes (MWCNTs). Structural analysis confirmed <i>β</i>-phase formation and good MWCNT dispersion up to 6 wt%, beyond which agglomeration occurred. Broadband dielectric spectroscopy was employed to characterize (PVDF)<sub>1−<i>x</i></sub>(MWCNTs)<sub><i>x</i></sub> films (0.00 ≤ <i>x</i> ≤ 0.09) across a frequency range of 0.1&#xa0;Hz to 20&#xa0;MHz and a temperature range of 30&#xa0;°C to 120&#xa0;°C. For example, the dielectric constant (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\varepsilon^{\prime}\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mi>ε</mi> <mo>′</mo> </msup> </math></EquationSource> </InlineEquation>) measured at 10&#xa0;Hz and 30&#xa0;°C increases from 2.08 for pure PVDF to 3.11 at <i>x</i> = 0.03 (⁓ 49% improvement), while the <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({\sigma}_{ac}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>σ</mi> <mrow> <mi mathvariant="italic">ac</mi> </mrow> </msub> </math></EquationSource> </InlineEquation> at 10 Hz and 120&#xa0;°C increases from 6.95 × 10⁻<sup>10</sup> S/cm for pure PVDF to 1.26 × 10⁻<sup>8</sup> S/cm at <i>x</i> = 0.09. A preliminary observation is a possible transition in the conduction mechanism from electronic (<InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(s\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>s</mi> </math></EquationSource> </InlineEquation> &gt; 0.5) to hole-dominated (<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(s\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>s</mi> </math></EquationSource> </InlineEquation> &lt; 0.5) at 120&#xa0;°C. The activation energy for conduction (<InlineEquation ID="IEq5"> <EquationSource Format="TEX">\({E}_{a}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mi>a</mi> </msub> </math></EquationSource> </InlineEquation>) at 0.1&#xa0;Hz is 1.16, 1.46, 1.20, and 1.43&#xa0;eV, while for <i>α</i>-relaxation (<InlineEquation ID="IEq6"> <EquationSource Format="TEX">\({E}_{a,relax}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mrow> <mi>a</mi> <mo>,</mo> <mi>r</mi> <mi>e</mi> <mi>l</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>) it is 1.06, 1.21, 1.44, and 1.36&#xa0;eV for <i>x</i> = 0.00, 0.03, 0.06, and 0.09, respectively.&#xa0;Impedance analysis reveals that increasing temperature (60–120&#xa0;°C) or MWCNT concentration reduces grain and grain boundary resistance. The F-factor improves by 60% and 100% at 20&#xa0;MHz for <i>x</i> = 0.09 compared to pure PVDF at 30&#xa0;°C and 120&#xa0;°C, respectively. The optimal MWCNT loading is <i>x</i> = 0.03 for maximum dielectric constant and <i>x</i> = 0.06 for minimum activation energy. The enhanced electrical properties position MWCNT-incorporated PVDF films as promising candidates for telecommunications, solar cells, and supercapacitors.</p>

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Temperature, frequency, and composition dependence of electrical and dielectric properties in PVDF/MWCNT

  • Noha Younis,
  • Naglaa AbdelAll,
  • Alaa M. Abd-Elnaiem,
  • A. Sedky,
  • Ghada A. Khouqeer,
  • Taha A. Hanafy,
  • M. Rashad

摘要

This study investigates the tunability of the electrical and dielectric properties of polyvinylidene fluoride (PVDF) through the incorporation of multi-walled carbon nanotubes (MWCNTs). Structural analysis confirmed β-phase formation and good MWCNT dispersion up to 6 wt%, beyond which agglomeration occurred. Broadband dielectric spectroscopy was employed to characterize (PVDF)1−x(MWCNTs)x films (0.00 ≤ x ≤ 0.09) across a frequency range of 0.1 Hz to 20 MHz and a temperature range of 30 °C to 120 °C. For example, the dielectric constant ( \(\varepsilon^{\prime}\) ε ) measured at 10 Hz and 30 °C increases from 2.08 for pure PVDF to 3.11 at x = 0.03 (⁓ 49% improvement), while the \({\sigma}_{ac}\) σ ac at 10 Hz and 120 °C increases from 6.95 × 10⁻10 S/cm for pure PVDF to 1.26 × 10⁻8 S/cm at x = 0.09. A preliminary observation is a possible transition in the conduction mechanism from electronic ( \(s\) s > 0.5) to hole-dominated ( \(s\) s < 0.5) at 120 °C. The activation energy for conduction ( \({E}_{a}\) E a ) at 0.1 Hz is 1.16, 1.46, 1.20, and 1.43 eV, while for α-relaxation ( \({E}_{a,relax}\) E a , r e l a x ) it is 1.06, 1.21, 1.44, and 1.36 eV for x = 0.00, 0.03, 0.06, and 0.09, respectively. Impedance analysis reveals that increasing temperature (60–120 °C) or MWCNT concentration reduces grain and grain boundary resistance. The F-factor improves by 60% and 100% at 20 MHz for x = 0.09 compared to pure PVDF at 30 °C and 120 °C, respectively. The optimal MWCNT loading is x = 0.03 for maximum dielectric constant and x = 0.06 for minimum activation energy. The enhanced electrical properties position MWCNT-incorporated PVDF films as promising candidates for telecommunications, solar cells, and supercapacitors.