Scholarlink

<p>Inverted perovskite solar cells (PSCs) have demonstrated remarkable potential in renewable energy applications due to solution processability, low cost, high efficiency, and excellent stability. However, interfacial defects between NiO<sub>x</sub> HTLs and perovskite films, along with their adverse effects on perovskite crystallization, remain critical challenges limiting device performance. This study presents a static–dynamic dual-step spin-coating strategy to in situ repair surface defects of NiO<sub>x</sub> films, achieving compact and highly conductive HTLs. Perovskite films deposited on modified NiO<sub>x</sub> substrates exhibited enlarged grain sizes with uniform distribution and enhanced interfacial charge transport properties. The optimized bilayer architecture effectively reduces perovskite defect density while improving hole extraction capability and suppressing interfacial non-radiative recombination. Consequently, devices based on bilayer NiO<sub>x</sub> achieved a champion power conversion efficiency (PCE) of 21.25%, with a short-circuit current density (J<sub>sc</sub>) of 24.73&#xa0;mA&#xa0;cm⁻<sup>2</sup>, an open-circuit voltage (V<sub>oc</sub>) of 1.04&#xa0;V, and a fill factor (FF) of 83.32%. These results are superior to those of single-layer NiO<sub>x</sub> counterparts (PCE of 20.62%, J<sub>sc</sub> of 23.96&#xa0;mA&#xa0;cm⁻<sup>2</sup>, V<sub>oc</sub> of 1.03&#xa0;V, FF of 82.15%). Moreover, the bilayer devices demonstrated excellent reproducibility. This work provides new insights into interface engineering strategies for high-performance inverted perovskite photovoltaics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Dynamic interface reconstruction boosts hole transport in bilayer NiOx-based inverted perovskite solar cells

  • 期刊论文

  • 发表日期：

    2026年7月5日

查看全文
  • Xiaoyun Wang,
  • Anmei Wang,
  • Yunzhen Zhang,
  • Tuanhui Feng,
  • Xiaojing Lu

摘要

Inverted perovskite solar cells (PSCs) have demonstrated remarkable potential in renewable energy applications due to solution processability, low cost, high efficiency, and excellent stability. However, interfacial defects between NiOx HTLs and perovskite films, along with their adverse effects on perovskite crystallization, remain critical challenges limiting device performance. This study presents a static–dynamic dual-step spin-coating strategy to in situ repair surface defects of NiOx films, achieving compact and highly conductive HTLs. Perovskite films deposited on modified NiOx substrates exhibited enlarged grain sizes with uniform distribution and enhanced interfacial charge transport properties. The optimized bilayer architecture effectively reduces perovskite defect density while improving hole extraction capability and suppressing interfacial non-radiative recombination. Consequently, devices based on bilayer NiOx achieved a champion power conversion efficiency (PCE) of 21.25%, with a short-circuit current density (Jsc) of 24.73 mA cm⁻2, an open-circuit voltage (Voc) of 1.04 V, and a fill factor (FF) of 83.32%. These results are superior to those of single-layer NiOx counterparts (PCE of 20.62%, Jsc of 23.96 mA cm⁻2, Voc of 1.03 V, FF of 82.15%). Moreover, the bilayer devices demonstrated excellent reproducibility. This work provides new insights into interface engineering strategies for high-performance inverted perovskite photovoltaics.