<p>The frequency- and bias-dependent electrical behavior of Au/NAMA/n-Si Schottky diodes with an organic interfacial layer is systematically investigated using a comprehensive admittance spectroscopy framework. By combining capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), capacitance–frequency (<i>C</i>–<i>f</i>), and conductance–frequency (<i>G</i>–<i>f</i>) analyses, the dynamic response of interface states and their impact on charge transport are elucidated. The applied methodology enables the decoupling of interface state effects from series resistance contributions through the implementation of the Nicollian–Brews approach, allowing a more accurate determination of intrinsic device characteristics. Interface state density and relaxation times are extracted using Hill–Coleman and parallel conductance methods, revealing a continuous distribution of interface states with densities on the order of 10¹¹&#xa0;eV⁻¹&#xa0;cm⁻² and relaxation times ranging from 10⁻⁶ to 10⁻⁵&#xa0;s, indicating the coexistence of fast and slow trap states. Reverse-bias capacitance analysis is employed to determine key diode parameters, including donor concentration, depletion width, diffusion potential, and Schottky barrier height. The extracted parameters exhibit pronounced frequency dependence at low frequencies due to interface-related effects, while converging to stable values at higher frequencies, reflecting intrinsic bulk properties. Overall, the results demonstrate that the electrical behavior of Au/NAMA/n-Si Schottky diodes is predominantly governed by dynamic interface state processes, and that controlled organic interlayers provide an effective route for tuning frequency-dependent charge transport and interface dynamics in Schottky-based electronic devices.</p>